Nanocrystal physical attributes influencing non-volatile memory performance

2005 ◽  
Author(s):  
B. Hradsky ◽  
R. Muralidhar ◽  
R.A. Rao ◽  
B. Steimle ◽  
S. Straub ◽  
...  
Keyword(s):  
Memory Performance ◽  
Non Volatile Memory ◽  
Physical Attributes ◽  
Volatile Memory

scholarly journals Resistive non-volatile memories fabricated with poly(vinylidene fluoride)/poly(thiophene) blend nanosheets

RSC Advances ◽  
2018 ◽  
Vol 8 (15) ◽  
pp. 7963-7968 ◽  
Author(s):  
Huie Zhu ◽  
Shunsuke Yamamoto ◽  
Jun Matsui ◽  
Tokuji Miyashita ◽  
Masaya Mitsuishi
Keyword(s):  
Vinylidene Fluoride ◽  
Memory Performance ◽  
Poly Vinylidene Fluoride ◽  
Non Volatile Memory ◽  
Volatile Memory ◽  
Long Endurance

Ferroelectric poly(vinylidene fluoride)/semiconductive polythiophene blend nanosheets show good resistive non-volatile memory performance with a fresh high ON/OFF ratio and long endurance to 30 days.

Performance of Silicon Nanocrystal Non-Volatile Memory Devices Under Various Programming Mechanisms

2007 ◽  
Vol 7 (1) ◽  
pp. 329-334 ◽  
Author(s):  
C. Y. Ng ◽  
T. P. Chen ◽  
J. I. Wong ◽  
M. Yang ◽  
T. S. Khor ◽  
...  
Keyword(s):  
Retention Time ◽  
Memory Performance ◽  
Low Energy ◽  
Memory Window ◽  
Memory Devices ◽  
Hot Electron ◽  
Silicon Nanocrystal ◽  
Non Volatile Memory ◽  
Drain Bias ◽  
Volatile Memory

Non-volatile memory devices based on silicon nanocrystal synthesized with very low energy Si+ implantation are fabricated. Memory performance under various programming mechanisms including Fowler-Nordheim (FN), drain-bias channel-hot-electron (DCHE), and source-bias channel-hot-electron (SCHE) has been investigated. It is observed that the DCHE yields the largest memory window among the three programming mechanisms. The DCHE and SCHE have similar endurance characteristics, but the SCHE has a longer retention time than the DCHE. Both the DCHE and SCHE have a larger memory window, a better endurance and a longer retention time as compared to the FN. Explanations to the phenomena are given.

ECC-Based Bit-Write Reduction Code Generation for Non-Volatile Memory

2015 ◽  
Vol E98.A (12) ◽  
pp. 2494-2504 ◽  
Author(s):  
Masashi TAWADA ◽  
Shinji KIMURA ◽  
Masao YANAGISAWA ◽  
Nozomu TOGAWA
Keyword(s):  
Code Generation ◽  
Non Volatile Memory ◽  
Volatile Memory

Integrated low-temperature process for the fabrication of amorphous Si nanoparticles embedded in Al2 O3 for non-volatile memory application

2016 ◽  
Vol 213 (9) ◽  
pp. 2446-2451 ◽  
Author(s):  
Klemens Ilse ◽  
Thomas Schneider ◽  
Johannes Ziegler ◽  
Alexander Sprafke ◽  
Ralf B. Wehrspohn
Keyword(s):  
Low Temperature ◽  
Si Nanoparticles ◽  
Non Volatile Memory ◽  
Amorphous Si ◽  
Volatile Memory ◽  
Low Temperature Process

scholarly journals Secure Boot from Non-Volatile Memory for Programmable SoC Architectures

2020 ◽  
Author(s):  
Franz-Josef Streit ◽  
Florian Fritz ◽  
Andreas Becher ◽  
Stefan Wildermann ◽  
Stefan Werner ◽  
...  
Keyword(s):  
Non Volatile Memory ◽  
Volatile Memory

scholarly journals A Physical Unclonable Function Using a Configurable Tristate Hybrid Scheme With Non-Volatile Memory

2021 ◽  
Vol 2 ◽  
pp. 31-40
Author(s):  
Jiang Li ◽  
Yijun Cui ◽  
Chongyan Gu ◽  
Chenghua Wang ◽  
Weiqiang Liu ◽  
...  
Keyword(s):  
Physical Unclonable Function ◽  
Hybrid Scheme ◽  
Non Volatile Memory ◽  
Volatile Memory

WOBTree: a write-optimized B+-tree for non-volatile memory

2021 ◽  
Vol 15 (5) ◽  
Author(s):  
Haitao Wang ◽  
Zhanhuai Li ◽  
Xiao Zhang ◽  
Xiaonan Zhao ◽  
Song Jiang
Keyword(s):  
Non Volatile Memory ◽  
Volatile Memory

scholarly journals Multibit non-volatile memory based on WS2 transistor with engineered gate stack

AIP Advances ◽  
2020 ◽  
Vol 10 (12) ◽  
pp. 125124
Author(s):  
Xinyi Zhu ◽  
Longfei He ◽  
Yafen Yang ◽  
Kai Zhang ◽  
Hao Zhu ◽  
...  
Keyword(s):  
Gate Stack ◽  
Non Volatile Memory ◽  
Volatile Memory
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