Integrated low-temperature process for the fabrication of amorphous Si nanoparticles embedded in Al2 O3 for non-volatile memory application

2016 ◽  
Vol 213 (9) ◽  
pp. 2446-2451 ◽  
Author(s):  
Klemens Ilse ◽  
Thomas Schneider ◽  
Johannes Ziegler ◽  
Alexander Sprafke ◽  
Ralf B. Wehrspohn
Keyword(s):  
Low Temperature ◽  
Si Nanoparticles ◽  
Non Volatile Memory ◽  
Amorphous Si ◽  
Volatile Memory ◽  
Low Temperature Process

Low Temperature Rectifying Junctions for Crossbar Non-Volatile Memory Devices

2009 ◽  
Author(s):  
G. Tallarida ◽  
N. Huby ◽  
B. Kutrzeba-Kotowska ◽  
S. Spiga ◽  
M. Arcari ◽  
...  
Keyword(s):  
Low Temperature ◽  
Memory Devices ◽  
Non Volatile Memory ◽  
Volatile Memory

Low-Temperature-Grown Transition Metal Oxide Based Storage Materials and Oxide Transistors for High-Density Non-volatile Memory

2009 ◽  
Vol 19 (10) ◽  
pp. 1587-1593 ◽  
Author(s):  
Myoung-Jae Lee ◽  
Sun I. Kim ◽  
Chang B. Lee ◽  
Huaxiang Yin ◽  
Seung-Eon Ahn ◽  
...  
Keyword(s):  
Low Temperature ◽  
Transition Metal ◽  
Metal Oxide ◽  
Transition Metal Oxide ◽  
High Density ◽  
Storage Materials ◽  
Non Volatile Memory ◽  
Volatile Memory

Low-temperature LPCVD of Si nanocrystals from disilane and trisilane (Silcore®) embedded in ALD-alumina for non-volatile memory devices

2007 ◽  
Vol 201 (22-23) ◽  
pp. 9209-9214 ◽  
Author(s):  
I. Brunets ◽  
A.A.I. Aarnink ◽  
A. Boogaard ◽  
A.Y. Kovalgin ◽  
R.A.M. Wolters ◽  
...  
Keyword(s):  
Low Temperature ◽  
Memory Devices ◽  
Si Nanocrystals ◽  
Non Volatile Memory ◽  
Volatile Memory
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