scholarly journals Resistive non-volatile memories fabricated with poly(vinylidene fluoride)/poly(thiophene) blend nanosheets

RSC Advances ◽  
2018 ◽  
Vol 8 (15) ◽  
pp. 7963-7968 ◽  
Author(s):  
Huie Zhu ◽  
Shunsuke Yamamoto ◽  
Jun Matsui ◽  
Tokuji Miyashita ◽  
Masaya Mitsuishi
Keyword(s):  
Vinylidene Fluoride ◽  
Memory Performance ◽  
Poly Vinylidene Fluoride ◽  
Non Volatile Memory ◽  
Volatile Memory ◽  
Long Endurance

Ferroelectric poly(vinylidene fluoride)/semiconductive polythiophene blend nanosheets show good resistive non-volatile memory performance with a fresh high ON/OFF ratio and long endurance to 30 days.

A two-step annealing process for enhancing the ferroelectric properties of poly(vinylidene fluoride) (PVDF) devices

2015 ◽  
Vol 3 (10) ◽  
pp. 2366-2370 ◽  
Author(s):  
Ji Hoon Park ◽  
Narendra Kurra ◽  
M. N. AlMadhoun ◽  
Ihab N. Odeh ◽  
H. N. Alshareef
Keyword(s):  
Thin Films ◽  
Vinylidene Fluoride ◽  
Ferroelectric Properties ◽  
Polymer Thin Films ◽  
Annealing Process ◽  
Memory Devices ◽  
Poly Vinylidene Fluoride ◽  
Non Volatile Memory ◽  
Volatile Memory

We report a simple two-step annealing scheme for the fabrication of stable non-volatile memory devices employing poly(vinylidene fluoride) (PVDF) polymer thin-films.

Optimization of poly(vinylidene fluoride-trifluoroethylene) films as non-volatile memory for flexible electronics

2010 ◽  
Vol 11 (5) ◽  
pp. 925-932 ◽  
Author(s):  
D. Mao ◽  
M.A. Quevedo-Lopez ◽  
H. Stiegler ◽  
B.E. Gnade ◽  
H.N. Alshareef
Keyword(s):  
Flexible Electronics ◽  
Vinylidene Fluoride ◽  
Poly Vinylidene Fluoride ◽  
Non Volatile Memory ◽  
Volatile Memory

The flexible non-volatile memory devices using oxide semiconductors and ferroelectric polymer poly(vinylidene fluoride-trifluoroethylene)

2011 ◽  
Vol 99 (1) ◽  
pp. 012901 ◽  
Author(s):  
Gwang-Geun Lee ◽  
Eisuke Tokumitsu ◽  
Sung-Min Yoon ◽  
Yoshihisa Fujisaki ◽  
Joo-Won Yoon ◽  
...  
Keyword(s):  
Vinylidene Fluoride ◽  
Memory Devices ◽  
Oxide Semiconductors ◽  
Ferroelectric Polymer ◽  
Poly Vinylidene Fluoride ◽  
Non Volatile Memory ◽  
Volatile Memory

Effect of Carbon Nanotubes on the Shape Memory Performance of Poly(vinylidene fluoride)/Acrylic Blends

2013 ◽  
Vol 30 (2) ◽  
pp. 134
Author(s):  
Hui FU ◽  
Jishan QIU ◽  
Ning CHONG ◽  
Yaqing WANG ◽  
Yuanyuan TIAN ◽  
...  
Keyword(s):  
Carbon Nanotubes ◽  
Shape Memory ◽  
Vinylidene Fluoride ◽  
Memory Performance ◽  
Poly Vinylidene Fluoride

Performance of Silicon Nanocrystal Non-Volatile Memory Devices Under Various Programming Mechanisms

2007 ◽  
Vol 7 (1) ◽  
pp. 329-334 ◽  
Author(s):  
C. Y. Ng ◽  
T. P. Chen ◽  
J. I. Wong ◽  
M. Yang ◽  
T. S. Khor ◽  
...  
Keyword(s):  
Retention Time ◽  
Memory Performance ◽  
Low Energy ◽  
Memory Window ◽  
Memory Devices ◽  
Hot Electron ◽  
Silicon Nanocrystal ◽  
Non Volatile Memory ◽  
Drain Bias ◽  
Volatile Memory

Non-volatile memory devices based on silicon nanocrystal synthesized with very low energy Si+ implantation are fabricated. Memory performance under various programming mechanisms including Fowler-Nordheim (FN), drain-bias channel-hot-electron (DCHE), and source-bias channel-hot-electron (SCHE) has been investigated. It is observed that the DCHE yields the largest memory window among the three programming mechanisms. The DCHE and SCHE have similar endurance characteristics, but the SCHE has a longer retention time than the DCHE. Both the DCHE and SCHE have a larger memory window, a better endurance and a longer retention time as compared to the FN. Explanations to the phenomena are given.

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