Material and device characterizations of AlGaN/GaN metal-oxide-semiconductor high electron mobility transistors with reactive-sputtered HfO2 gate dielectric
2012 ◽
Vol 33
(7)
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pp. 997-999
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2011 ◽
Vol 50
(4)
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pp. 04DF03
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2012 ◽
Vol 45
(4)
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pp. 045105
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2011 ◽
Vol 50
(4S)
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pp. 04DF03
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2018 ◽
Vol 33
(9)
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pp. 095023
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2019 ◽
pp. 391-402
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