Suppression of Gate Leakage and Enhancement of Breakdown Voltage Using Thermally Oxidized Al Layer as Gate Dielectric for AlGaN/GaN Metal–Oxide–Semiconductor High-Electron-Mobility Transistors
2011 ◽
Vol 50
(4)
◽
pp. 04DF03
◽
2011 ◽
Vol 50
(4S)
◽
pp. 04DF03
◽
2012 ◽
Vol 33
(7)
◽
pp. 997-999
◽
2012 ◽
Vol 45
(4)
◽
pp. 045105
◽
2018 ◽
Vol 33
(9)
◽
pp. 095023
◽
2019 ◽
pp. 391-402
◽