Integrated Broadband Power Amplifier for Systemon-Chips Wireless Devices in 65 nm CMOS Process

Author(s):  
V.V. Erokhin ◽  
R.R. Fakhrutdinov ◽  
R.A. Wolf ◽  
Z.B. Sadykov ◽  
S.A. Zavyalov
2019 ◽  
Vol 66 (8) ◽  
pp. 1351-1355 ◽  
Author(s):  
Hyuk Su Son ◽  
Tae Hwan Jang ◽  
Seung Hun Kim ◽  
Kyung Pil Jung ◽  
Joon Hyung Kim ◽  
...  
Keyword(s):  

2020 ◽  
Vol 68 (7) ◽  
pp. 3045-3055
Author(s):  
Kyung Pil Jung ◽  
Hyuk Su Son ◽  
Joon Hyung Kim ◽  
Chul Soon Park
Keyword(s):  

2014 ◽  
Vol 618 ◽  
pp. 543-547
Author(s):  
Zhou Yu ◽  
Xiang Ning Fan ◽  
Zai Jun Hua ◽  
Chen Xu

A power amplifier (PA) for multi-mode multi-standard transceiver which is implemented in a TSMC 0.18μm process is presented. The proposed PA uses matching compensation, lossy matching network and negative feedback technique to improve bandwidth. To achieve the linearity performance, the two-stage PA operates in Class-A regime. Simulation results show that the power amplifier achieves maximum output power of more than 24dBm in 0.7~2.6GHz. The output P1dBof the PA is larger than 22dBm. The simulated power gain is more than 27dB. The S11 is less than-10dB and the S22 is under-5dB.


2016 ◽  
Vol 63 (9) ◽  
pp. 1360-1369 ◽  
Author(s):  
Fang Tang ◽  
Shiping Li ◽  
Bo Wang ◽  
Amine Bermak ◽  
Xichuan Zhou ◽  
...  

Sign in / Sign up

Export Citation Format

Share Document