Characterization of a three-phase dual active bridge DC/DC converter in wye-delta connection for a high frequency and high power applications

Author(s):  
Seunghun Baek ◽  
Sumit Dutta ◽  
Subhashish Bhattacharya
2011 ◽  
Vol 20 (03) ◽  
pp. 423-430
Author(s):  
DIEGO GUERRA ◽  
FABIO ALESSIO MARINO ◽  
STEPHEN GOODNICK ◽  
DAVID FERRY ◽  
MARCO SARANITI

A high-frequency a high-power GaN HEMT was analyzed using our full band Cellular Monte Carlo (CMC) simulator, in order to extract small signal parameters and figures of merit, and to correlate them to carrier dynamics and distribution inside the device. A complete RF and DC characterization of the device was performed using experimental data to calibrate the few adjustable parameters of the simulator. Then, gate-related capacitances, such as Cg, Cgd, and Cgs, were directly and indirectly extracted combining small-signal analysis and DC characterization.


2014 ◽  
Vol 29 (8) ◽  
pp. 4067-4077 ◽  
Author(s):  
Stefan P. Engel ◽  
Nils Soltau ◽  
Hanno Stagge ◽  
Rik W. De Doncker

1992 ◽  
Vol 28 (6) ◽  
pp. 1294-1301 ◽  
Author(s):  
M.N. Kheraluwala ◽  
R.W. Gascoigne ◽  
D.M. Divan ◽  
E.D. Baumann

Author(s):  
Rene P. T. Bascope ◽  
Carlos G. C. Branco ◽  
Cicero M. T. Cruz ◽  
Luiz D. S. Bezerra ◽  
Guilherme A. T. Hertz

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