Collector junction depletion-layer transit time model of SiGe HBT with space SiGe layer

2009 ◽  
Author(s):  
Huiyong Hu ◽  
Rui Chen ◽  
Heming Zhang ◽  
Jianjun Song
Keyword(s):  
Transit Time ◽  
Sige Layer ◽  
Depletion Layer ◽  
Time Model ◽  
Sige Hbt ◽  
Collector Junction

Model of transit time for SiGe HBT collector junction depletion-layer

2005 ◽  
Vol 14 (7) ◽  
pp. 1439-1443
Author(s):  
Hu Hui-Yong ◽  
Zhang He-Ming ◽  
Dai Xian-Ying ◽  
Jia Xin-Zhang ◽  
Cui Xiao-Ying ◽  
...  
Keyword(s):  
Transit Time ◽  
Depletion Layer ◽  
Sige Hbt ◽  
Collector Junction

scholarly journals Collector junction depletion-layer width model of SiGeheterojunction bipolar transistor with intrinsic SiGe layer

2011 ◽  
Vol 60 (1) ◽  
pp. 017303
Author(s):  
Hu Hui-Yong ◽  
Shu Yu ◽  
Zhang He-Ming ◽  
Song Jian-Jun ◽  
Xuan Rong-Xi ◽  
...  
Keyword(s):  
Sige Layer ◽  
Bipolar Transistor ◽  
Depletion Layer ◽  
Layer Width ◽  
Depletion Layer Width ◽  
Collector Junction

A transit time model for thin SOI Si/SiGe HBT

2005 ◽  
Author(s):  
S. Fregonese ◽  
G. Avenier ◽  
C. Maneux ◽  
A. Chantre ◽  
T. Zimmer
Keyword(s):  
Transit Time ◽  
Time Model ◽  
Sige Hbt

Experimentally Proven Equation for the Collector-Depletion-Layer Transit Time of npn Bipolar Transistors

1997 ◽  
Vol 36 (Part 1, No. 11) ◽  
pp. 6724-6725
Author(s):  
Kazuhiro Mochizuki ◽  
Takashi Uchino ◽  
Tohru Nakamura
Keyword(s):  
Transit Time ◽  
Bipolar Transistors ◽  
Depletion Layer

A physics-based high-injection transit-time model applied to barrier effects in SiGe HBTs

2002 ◽  
Vol 49 (10) ◽  
pp. 1807-1813 ◽  
Author(s):  
Qingqing Liang ◽  
J.D. Cressler ◽  
Guofu Niu ◽  
R.M. Malladi ◽  
K. Newton ◽  
...  
Keyword(s):  
Transit Time ◽  
Time Model ◽  
Barrier Effects ◽  
High Injection
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