Extinction Ratio Improvement of LiNbO3 Integrated Optical Interferometers by Photorefractive Tuning of Y-branches

Author(s):  
Mikhail V. Parfenov ◽  
Aleksandr V. Tronev ◽  
Aleksei N. Petrov ◽  
Piotr M. Agruzov ◽  
Igor V. Ilichev ◽  
...  
Author(s):  
М.В. Парфенов ◽  
А.В. Тронев ◽  
И.В. Ильичев ◽  
П.М. Агрузов ◽  
А.В. Шамрай

Optical tuning of the splitting ratio in an integrated optical Y-branch on lithium niobate (LiNbO3) substrate was investigated. Regions of an Y-branch susceptible to the external illumination were defined. Tuning of the splitting ratio in the range of 2% was experimentally demonstrated, which can be effectively used for improvement of Mach-Zehnder modulators extinction ratio.


1999 ◽  
Author(s):  
Celia Sanchez Perez ◽  
Pierre Benech ◽  
Alain Morand ◽  
Ted S. Tedjini ◽  
Dominique Bosc ◽  
...  

2011 ◽  
Vol 40 (11) ◽  
pp. 1636-1640
Author(s):  
刘福民 LIU Fumin ◽  
黄韬 HUANG Tao ◽  
李瑞龙 LI Ruilong ◽  
郑国康 ZHENG Guokang

Nanophotonics ◽  
2021 ◽  
Vol 0 (0) ◽  
Author(s):  
Mohsen Heidari ◽  
Vahid Faramarzi ◽  
Zohreh Sharifi ◽  
Mahdieh Hashemi ◽  
Shahram Bahadori-Haghighi ◽  
...  

Abstract The reversible insulating-to-conducting phase transition (ICPT) of vanadium dioxide (VO2) makes it a versatile candidate for the implementation of integrated optical devices. In this paper, a bi-functional in-line optical device based on a four-layer stack of PMMA/graphene/VO2/graphene deposited on a side-polished fiber (SPF) is proposed. The structure can be employed as an ultra-compact TE modulator or a TM-pass polarizer, operating at 1.55 μm. We show that the ICPT characteristic can be used for polarization-selective mode shaping (PSMS) to manipulate orthogonal modes separately. On the one hand, as an optical modulator, the PSMS is used to modify mode profiles so that the TE mode attenuation is maximized in the off-state (and IL is minimized in the on-state), while the power carried by the TM mode remains unchanged. As a result, a TE modulator with an ultrahigh extinction ratio (ER) of about ER = 165 dB/mm and a very low insertion loss (IL) of IL = 2.3 dB/mm is achieved. On the other hand, the structure can act as a TM-pass polarizer featuring an extremely high polarization extinction ratio (PER) of about PER = 164 dB/mm and a low TM insertion of IL = 3.86 dB/mm. The three-dimensional heat transfer calculation for the ICPT process reveals that the response time of the modulator is in the order of few nanoseconds. Moreover, the required bias voltage of the proposed device is calculated to be as low as 1.1 V. The presented results are promising a key step towards the realization of an integrated high-performance in-line modulator/polarizer.


2021 ◽  
Author(s):  
Evgeniy S. Lotkov ◽  
Alexander S. Baburin ◽  
Ilya A. Ryzhikov ◽  
Olga S. Sorokina ◽  
Anton I. Ivanov ◽  
...  

Abstract Indium tin oxide (ITO) platform is one of the promising solutions towards state-of-the-art integrated optical modulators for silicon photonics applications. We demonstrate the way to obtain both high extinction ratio and low insertion loss electro-optic modulation with ITO-based film stack. By investigating e-beam evaporated 20 nm-thick ITO films with amorphous, heterogeneously crystalline, homogeneously crystalline with hidden coarse grains and pronounced coarsely crystalline structure, a low carrier concentration (from 1·1020 to 2·1020 cm-3) is achieved. The mechanism of oxygen migration in ITO film crystallization is proposed based on morphological features observed under low-energy growth conditions. We compare three electro-optic modulator active elements (current-voltage and optical characteristics) and reach strong ITO dielectric permittivity variation induced by charge accumulation/depletion (Δn = 0.199, Δk = 0.240 at λ = 1550nm under ±16V). Our simulations and experimental results demonstrate the unique potential to create integrated GHz-range electro-optical modulators with sub-db losses.


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