Evaluation criteria of the environmental degradation of organic insulation materials: sorption kinetics and electrical properties

Author(s):  
G. Lupo ◽  
V. Tucci ◽  
L. Egiziano ◽  
R. Bozzo
Cryogenics ◽  
2021 ◽  
pp. 103349
Author(s):  
Peng Jia ◽  
Dong Xu ◽  
Yuchen Zhao ◽  
Haoying Qi ◽  
Arata Nishimura ◽  
...  

2002 ◽  
Vol 3 (1) ◽  
pp. 9-13 ◽  
Author(s):  
Sang-Cheol Kim ◽  
Jeong-Bin Ok ◽  
Myeong-Jin Aho ◽  
Do-Hyun Park ◽  
Gun-Joo Lee

2015 ◽  
Vol 60 (1) ◽  
pp. 335-339 ◽  
Author(s):  
M. Stachowicz ◽  
B. Opyd ◽  
K. Granat

AbstractThe paper presents a research on abrasion resistance of selected construction materials designed for foundry tooling applied in the innovative microwave heating process of moulding and core sands. One of the main selection criteria of the materials for foundry tooling, in particular for models, moulding boards, moulding boxes and core boxes, is their good abrasive wear resistance. Usability of the selected polymeric materials, designed for foundry tooling used in electromagnetic field, is decided also by other evaluation criteria determined in the examinations, like thermal resistance and electrical properties. Abrasion resistance of the selected materials was determined for three grades of the moulding sand matrixes. Combined analysis of the determined abrasion resistance, considering also electrical properties and thermal resistance of the foundry tooling materials, characterising their usability for microwave heating of moulding and core sands, will make possible their systemising with respect to effectiveness and efficiency of the heating process, taking under consideration durability of such foundry tooling to be used in industrial conditions.


Author(s):  
F. M. Ross ◽  
R. Hull ◽  
D. Bahnck ◽  
J. C. Bean ◽  
L. J. Peticolas ◽  
...  

We describe an investigation of the electrical properties of interfacial dislocations in strained layer heterostructures. We have been measuring both the structural and electrical characteristics of strained layer p-n junction diodes simultaneously in a transmission electron microscope, enabling us to correlate changes in the electrical characteristics of a device with the formation of dislocations.The presence of dislocations within an electronic device is known to degrade the device performance. This degradation is of increasing significance in the design and processing of novel strained layer devices which may require layer thicknesses above the critical thickness (hc), where it is energetically favourable for the layers to relax by the formation of misfit dislocations at the strained interfaces. In order to quantify how device performance is affected when relaxation occurs we have therefore been investigating the electrical properties of dislocations at the p-n junction in Si/GeSi diodes.


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