High-efficiency subwavelength-engineered surface grating couplers in SOI and DSOI

Author(s):  
Daniel Benedikovic ◽  
Pavel Cheben ◽  
Jens H. Schmid ◽  
Dan-Xia Xu ◽  
Shurui Wang ◽  
...  
2008 ◽  
Vol 16 (1) ◽  
pp. 328 ◽  
Author(s):  
Guillaume Maire ◽  
Laurent Vivien ◽  
Guillaume Sattler ◽  
Andrzej Kazmierczak ◽  
Benito Sanchez ◽  
...  

2021 ◽  
pp. 2000542
Author(s):  
Alejandro Sánchez‐Postigo ◽  
Robert Halir ◽  
J. Gonzalo Wangüemert‐Pérez ◽  
Alejandro Ortega‐Moñux ◽  
Shurui Wang ◽  
...  

2014 ◽  
Vol 8 (6) ◽  
Author(s):  
Daniel Benedikovic ◽  
Pavel Cheben ◽  
Jens H. Schmid ◽  
Dan‐Xia Xu ◽  
Jean Lapointe ◽  
...  

2012 ◽  
Vol 24 (17) ◽  
pp. 1536-1538 ◽  
Author(s):  
Nannicha Hattasan ◽  
Bart Kuyken ◽  
Francois Leo ◽  
Eva M. P. Ryckeboer ◽  
Diedrik Vermeulen ◽  
...  

2020 ◽  
Vol 45 (13) ◽  
pp. 3701 ◽  
Author(s):  
Mohsen Kamandar Dezfouli ◽  
Yuri Grinberg ◽  
Daniele Melati ◽  
Pavel Cheben ◽  
Jens H. Schmid ◽  
...  

2017 ◽  
Author(s):  
Alejandro Sánchez-Postigo ◽  
J. Gonzalo Wangüemert-Pérez ◽  
José Manuel Luque-González ◽  
Íñigo Molina-Fernández ◽  
Pavel Cheben ◽  
...  

2006 ◽  
Vol 24 (10) ◽  
pp. 3810-3815 ◽  
Author(s):  
Vivien ◽  
Pascal ◽  
Lardenois ◽  
Marris-Morini ◽  
Cassan ◽  
...  

Micromachines ◽  
2020 ◽  
Vol 11 (9) ◽  
pp. 859
Author(s):  
Zan Zhang ◽  
Beiju Huang ◽  
Zanyun Zhang ◽  
Chuantong Cheng ◽  
Bing Bai ◽  
...  

We propose a broadband high-efficiency grating coupler for perfectly vertical fiber-to-chip coupling. The up-reflection is reduced, hence enhanced coupling efficiency is achieved with the help of a Fabry-Perot-like cavity composed of a silicon nitride reflector and the grating itself. With the theory of the Fabry-Perot cavity, the dimensional parameters of the coupler are investigated. With the optimized parameters, up-reflection in the C-band is reduced from 10.6% to 5%, resulting in an enhanced coupling efficiency of 80.3%, with a 1-dB bandwidth of 58 nm, which covers the entire C-band. The minimum feature size of the proposed structure is over 219 nm, which makes our design easy to fabricate through 248 nm deep-UV lithography, and lowers the fabrication cost. The proposed design has potential in efficient and fabrication-tolerant interfacing applications, between off-chip light sources and integrated chips that can be mass-produced.


Author(s):  
Siddharth Nambiar ◽  
Abhai Kumar ◽  
Rakshitha Kallega ◽  
Praveen Ranganath ◽  
Shankar K Selvaraja

2021 ◽  
Author(s):  
Shuting Kang ◽  
Ru Zhang ◽  
Zhenzhong Hao ◽  
Di Jia ◽  
Feng Gao ◽  
...  

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