Short-wave infrared continuous-variable quantum key distribution over satellite-to-submarine channels

The trans-media transmission of quantum pulse is one of means of free-space transmission which can be applied in continuous-variable quantum key distribution (CVQKD) system. In traditional implementations for atmospheric channels, the 1500-to-1600-nm pulse is regarded as an ideal quantum pulse carrier. Whereas, the underwater transmission of this pulses tends to suffer from severe attenuation, which inevitably deteriorates the security of the whole CVQKD system. In this paper, we propose an alternative scheme for implementations of CVQKD over satellite-to-submarine channels. We estimate the parameters of the trans-media channels, involving atmosphere, sea surface and seawater and find that the short-wave infrared performs well in the above channels. The 450 nm pulse is used for generations of quantum signal carriers to accomplish quantum communications through atmosphere, sea surface and seawater channels. Numerical simulations show that the proposed scheme can achieve the transmission distance of 600 km. In addition, we demonstrate that non-Gaussian operations can further lengthen its maximal transmission distance, which contributes to the establishment of practical global quantum networks.

Colloidal 2D PbSe Nanoplatelets with Efficient Emission Reaching the Telecom O-, E- and S-Band

Colloidal two-dimensional (2D) lead chalcogenide nanoplatelets (NPLs) represent highly interesting materials for near- and short wave-infrared applications including innovative glass fiber optics exhibiting negligible attenuation. In this work, we demonstrate...

Detection of Foreign Materials on Broiler Breast Meat Using a Fusion of Visible Near-Infrared and Short-Wave Infrared Hyperspectral Imaging

Foreign material (FM) found on a poultry product lowers the quality and safety of the product. We developed a fusion method combining two hyperspectral imaging (HSI) modalities in the visible-near infrared (VNIR) range of 400–1000 nm and the short-wave infrared (SWIR) range of 1000–2500 nm for the detection of FMs on the surface of fresh raw broiler breast fillets. Thirty different types of FMs that could be commonly found in poultry processing plants were used as samples and prepared in two different sizes (5 × 5 mm2 and 2 × 2 mm2). The accuracies of the developed Fusion model for detecting 2 × 2 mm2 pieces of polymer, wood, and metal were 95%, 95%, and 81%, respectively, while the detection accuracies of the Fusion model for detecting 5 × 5 mm2 pieces of polymer, wood, and metal were all 100%. The performance of the Fusion model was higher than the VNIR- and SWIR-based detection models by 18% and 5%, respectively, when F1 scores were compared, and by 38% and 5%, when average detection rates were compared. The study results suggested that the fusion of two HSI modalities could detect FMs more effectively than a single HSI modality.

Nanocrystallized Ge-Rich SiGe-HfO2 Highly Photosensitive in Short-Wave Infrared

Group IV nanocrystals (NCs), in particular from the Si–Ge system, are of high interest for Si photonics applications. Ge-rich SiGe NCs embedded in nanocrystallized HfO2 were obtained by magnetron sputtering deposition followed by rapid thermal annealing at 600 °C for nanostructuring. The complex characterization of morphology and crystalline structure by X-ray diffraction, μ-Raman spectroscopy, and cross-section transmission electron microscopy evidenced the formation of Ge-rich SiGe NCs (3–7 nm diameter) in a matrix of nanocrystallized HfO2. For avoiding the fast diffusion of Ge, the layer containing SiGe NCs was cladded by very thin top and bottom pure HfO2 layers. Nanocrystallized HfO2 with tetragonal/orthorhombic structure was revealed beside the monoclinic phase in both buffer HfO2 and SiGe NCs–HfO2 layers. In the top part, the film is mainly crystallized in the monoclinic phase. High efficiency of the photocurrent was obtained in a broad spectral range of curves of 600–2000 nm at low temperatures. The high-quality SiGe NC/HfO2 matrix interface together with the strain induced in SiGe NCs by nanocrystallization of both HfO2 matrix and SiGe nanoparticles explain the unexpectedly extended photoelectric sensitivity in short-wave infrared up to about 2000 nm that is more than the sensitivity limit for Ge, in spite of the increase of bandgap by well-known quantum confinement effect in SiGe NCs.