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An Ultra-Wideband and Low-Power Amplifier Using 0.35-μm SiGe BiCMOS Technology
2006 International Conference on Communications, Circuits and Systems
◽
10.1109/icccas.2006.285208
◽
2006
◽
Author(s):
Jia Chen
◽
T. Yoshimasu
◽
WeiLiang Hu
◽
Haiwen Liu
◽
N. Itoh
◽
...
Keyword(s):
Low Power
◽
Power Amplifier
◽
Ultra Wideband
◽
Bicmos Technology
◽
Sige Bicmos
Download Full-text
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A 3-10 GHz bandwidth low-noise and low-power amplifier for full-band UWB communications in 0.25- μm SiGe BiCMOS technology
RFIC) Symposium, 2005. Digest of Papers. 2005 IEEE Radio Frequency integrated Circuits
◽
10.1109/rfic.2005.1489204
◽
2005
◽
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Author(s):
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◽
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Analysis and Design of Low Power Wideband Programmable Frequency Divider in 0.13-μm SiGe BiCMOS Technology
AEU - International Journal of Electronics and Communications
◽
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◽
2021
◽
pp. 153879
Author(s):
Guoxiao Cheng
◽
Zhiqun Li
◽
Wen Wu
Keyword(s):
Low Power
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Frequency Divider
◽
Analysis And Design
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An interference-robust receiver for ultra-wideband radio in SiGe BiCMOS technology
IEEE Journal of Solid-State Circuits
◽
10.1109/jssc.2005.857431
◽
2005
◽
Vol 40
(12)
◽
pp. 2563-2572
◽
Cited By ~ 83
Author(s):
R. Roovers
◽
D.M.W. Leenaerts
◽
J. Bergervoet
◽
K.S. Harish
◽
R.C.H. van de Beek
◽
...
Keyword(s):
Ultra Wideband
◽
Bicmos Technology
◽
Sige Bicmos
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Wideband Radio
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A 20dBm E-band power amplifier in SiGe BiCMOS technology
2012 42nd European Microwave Conference
◽
10.23919/eumc.2012.6459375
◽
2012
◽
Cited By ~ 4
Author(s):
Roee Ben Yishay
◽
Roi Carmon
◽
Oded Katz
◽
Benny Sheinman
◽
Danny Elad
Keyword(s):
Power Amplifier
◽
Band Power
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Bicmos Technology
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A 17.8 dBm 110–130 GHz Power Amplifier and doubler chain in SiGe BiCMOS technology
2015 IEEE Radio Frequency Integrated Circuits Symposium (RFIC)
◽
10.1109/rfic.2015.7337787
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2015
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Cited By ~ 4
Author(s):
Roee Ben Yishay
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Keyword(s):
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A low-power, 10Gs/s track-and-hold amplifier in SiGe BiCMOS technology
Proceedings of the 31st European Solid-State Circuits Conference, 2005. ESSCIRC 2005.
◽
10.1109/esscir.2005.1541610
◽
2005
◽
Cited By ~ 13
Author(s):
Y. Borokhovych
◽
H. Gustat
◽
B. Tillack
◽
B. Heinemann
◽
Yuan Lu
◽
...
Keyword(s):
Low Power
◽
Bicmos Technology
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A 6~18GHz Ultra-Wideband LNA Using 0.13μm SiGe BiCMOS Technology
2018 14th IEEE International Conference on Solid-State and Integrated Circuit Technology (ICSICT)
◽
10.1109/icsict.2018.8565017
◽
2018
◽
Author(s):
Weipeng He
◽
Zhiqun Li
◽
Yan Yao
◽
Yongbin Xue
◽
Qin Li
Keyword(s):
Ultra Wideband
◽
Bicmos Technology
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Sige Bicmos
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A Low-Power 14% FTR Push-Push D-Band VCO in 130 nm SiGe BiCMOS Technology with −178 dBc/Hz FOMT
2020 IEEE 20th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems (SiRF)
◽
10.1109/sirf46766.2020.9040174
◽
2020
◽
Author(s):
Sascha Breun
◽
Matthias Voelkel
◽
Albert-Marcel Schrotz
◽
Marco Dietz
◽
Vadim Issakov
◽
...
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Low Power
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Bicmos Technology
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Low-power 60GHz receiver front-end with a variable-gain LNA in SiGe BiCMOS technology
2010 IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM)
◽
10.1109/bipol.2010.5668052
◽
2010
◽
Cited By ~ 3
Author(s):
Yaoming Sun
◽
Christoph J. Scheytt
Keyword(s):
Low Power
◽
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◽
Front End
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Sige Bicmos
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A low power programmable gain high PAE K-/Ka-band stacked amplifier in 0.18 µm SiGe BiCMOS technology
2015 IEEE MTT-S International Microwave Symposium
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10.1109/mwsym.2015.7166782
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2015
◽
Cited By ~ 1
Author(s):
Thangarasu Bharatha Kumar
◽
Kaixue Ma
◽
Kiat Seng Yeo
Keyword(s):
Low Power
◽
Ka Band
◽
Bicmos Technology
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Sige Bicmos
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Programmable Gain
Download Full-text
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