A 3-10 GHz bandwidth low-noise and low-power amplifier for full-band UWB communications in 0.25- μm SiGe BiCMOS technology

2005 ◽  
Author(s):  
N. Shiramizu ◽  
T. Masuda ◽  
M. Tanabe ◽  
K. Washio
Keyword(s):  
Low Power ◽  
Power Amplifier ◽  
Low Noise ◽  
Bicmos Technology ◽  
Full Band ◽  
Sige Bicmos

A Low Power SiGe-BiCMOS LNA for COMPASS Applications

2014 ◽  
Vol 513-517 ◽  
pp. 4580-4584
Author(s):  
Bing Liang Yu ◽  
Jin Li ◽  
Wen Yuan Li
Keyword(s):  
Low Power ◽  
Power Supply ◽  
Noise Figure ◽  
Low Noise ◽  
Low Noise Amplifier ◽  
Power Gain ◽  
Bicmos Technology ◽  
Sige Bicmos ◽  
Resistive Feedback ◽  
Noise Amplifier

A novel low-noise amplifier (LNA) suitable for COMPASS receiver applications is designed in SiGe-BiCMOS technology. Inductively degenerated technique and resistive feedback technique are employed to reduce the noise figure. With 1.8V power supply, the measured results achieve 17.23dB power gain and 2.58dB noise figure at 1.561GHz.

A 20dBm E-band power amplifier in SiGe BiCMOS technology

2012 ◽  
Author(s):  
Roee Ben Yishay ◽  
Roi Carmon ◽  
Oded Katz ◽  
Benny Sheinman ◽  
Danny Elad
Keyword(s):  
Power Amplifier ◽  
Band Power ◽  
Bicmos Technology ◽  
Sige Bicmos
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