scholarly journals Cross Domain Image Matching in Presence of Outliers

Author(s):  
Xin Liu ◽  
Seyran Khademi ◽  
Jan Van Gemert
Keyword(s):  
2019 ◽  
Vol 11 (19) ◽  
pp. 2243 ◽  
Author(s):  
Weiquan Liu ◽  
Cheng Wang ◽  
Xuesheng Bian ◽  
Shuting Chen ◽  
Wei Li ◽  
...  

Establishing the spatial relationship between 2D images captured by real cameras and 3D models of the environment (2D and 3D space) is one way to achieve the virtual–real registration for Augmented Reality (AR) in outdoor environments. In this paper, we propose to match the 2D images captured by real cameras and the rendered images from the 3D image-based point cloud to indirectly establish the spatial relationship between 2D and 3D space. We call these two kinds of images as cross-domain images, because their imaging mechanisms and nature are quite different. However, unlike real camera images, the rendered images from the 3D image-based point cloud are inevitably contaminated with image distortion, blurred resolution, and obstructions, which makes image matching with the handcrafted descriptors or existing feature learning neural networks very challenging. Thus, we first propose a novel end-to-end network, AE-GAN-Net, consisting of two AutoEncoders (AEs) with Generative Adversarial Network (GAN) embedding, to learn invariant feature descriptors for cross-domain image matching. Second, a domain-consistent loss function, which balances image content and consistency of feature descriptors for cross-domain image pairs, is introduced to optimize AE-GAN-Net. AE-GAN-Net effectively captures domain-specific information, which is embedded into the learned feature descriptors, thus making the learned feature descriptors robust against image distortion, variations in viewpoints, spatial resolutions, rotation, and scaling. Experimental results show that AE-GAN-Net achieves state-of-the-art performance for image patch retrieval with the cross-domain image patch dataset, which is built from real camera images and the rendered images from 3D image-based point cloud. Finally, by evaluating virtual–real registration for AR on a campus by using the cross-domain image matching results, we demonstrate the feasibility of applying the proposed virtual–real registration to AR in outdoor environments.


2011 ◽  
Vol 30 (6) ◽  
pp. 1-10 ◽  
Author(s):  
Abhinav Shrivastava ◽  
Tomasz Malisiewicz ◽  
Abhinav Gupta ◽  
Alexei A. Efros

Author(s):  
Abhinav Shrivastava ◽  
Tomasz Malisiewicz ◽  
Abhinav Gupta ◽  
Alexei A. Efros

IEEE Access ◽  
2018 ◽  
Vol 6 ◽  
pp. 17681-17698 ◽  
Author(s):  
Jing Li ◽  
Congcong Li ◽  
Tao Yang ◽  
Zhaoyang Lu

2019 ◽  
Vol 127 (11-12) ◽  
pp. 1738-1750 ◽  
Author(s):  
Bailey Kong ◽  
James Supanc̆ic̆ ◽  
Deva Ramanan ◽  
Charless C. Fowlkes

IEEE Access ◽  
2017 ◽  
Vol 5 ◽  
pp. 23190-23203 ◽  
Author(s):  
Jing Li ◽  
Congcong Li ◽  
Tao Yang ◽  
Zhaoyang Lu

Author(s):  
A. Olsen ◽  
J.C.H. Spence ◽  
P. Petroff

Since the point resolution of the JEOL 200CX electron microscope is up = 2.6Å it is not possible to obtain a true structure image of any of the III-V or elemental semiconductors with this machine. Since the information resolution limit set by electronic instability (1) u0 = (2/πλΔ)½ = 1.4Å for Δ = 50Å, it is however possible to obtain, by choice of focus and thickness, clear lattice images both resembling (see figure 2(b)), and not resembling, the true crystal structure (see (2) for an example of a Fourier image which is structurally incorrect). The crucial difficulty in using the information between Up and u0 is the fractional accuracy with which Af and Cs must be determined, and these accuracies Δff/4Δf = (2λu2Δf)-1 and ΔCS/CS = (λ3u4Cs)-1 (for a π/4 phase change, Δff the Fourier image period) are strongly dependent on spatial frequency u. Note that ΔCs(up)/Cs ≈ 10%, independent of CS and λ. Note also that the number n of identical high contrast spurious Fourier images within the depth of field Δz = (αu)-1 (α beam divergence) decreases with increasing high voltage, since n = 2Δz/Δff = θ/α = λu/α (θ the scattering angle). Thus image matching becomes easier in semiconductors at higher voltage because there are fewer high contrast identical images in any focal series.


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