Structural Quality Assessment of Edge Block Image Steganography with Improved Data Capacity

Along with the implementation of a register-based census we develop a methodological framework to assess administrative data sources for statistical use. Key aspects for the quality of these data are identified in the context of hyperdimensions and embedded into a process flow. Based on this approach we develop a structural quality framework and suggest a concept for quality assessment and several quality measures.

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PSNR vs SSIM: imperceptibility quality assessment for image steganography

Multimedia Tools and Applications ◽

10.1007/s11042-020-10035-z ◽

2020 ◽

Author(s):

De Rosal Igantius Moses Setiadi

Keyword(s):

Quality Assessment ◽

Image Steganography

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Molecular dynamic simulations to investigate the structural impact of known drug resistance mutations on HIV-1C Integrase-Dolutegravir binding

10.1101/781120 ◽

2019 ◽

Author(s):

Rumbidzai Chitongo ◽

Adetayo Emmanuel Obasa ◽

Sello Given Mikasi ◽

Graeme Brendon Jacobs ◽

Ruben Cloete

Keyword(s):

Protein Structure ◽

Quality Assessment ◽

Molecular Dynamic ◽

Interaction Analysis ◽

High Reliability ◽

Drug Binding ◽

World Health ◽

Structural Quality ◽

Radius Of Gyration ◽

Hiv 1

AbstractResistance associated mutations (RAMs) threaten the long-term success of combination antiretroviral therapy (cART) outcomes for HIV-1 treatment. HIV-1 Integrase (IN) strand transfer inhibitors (INSTIs) have proven to be a viable option for highly specific HIV-1 therapy. The INSTI, Dolutegravir is recommended by the World Health Organization for use as first-line cART. This study aims to understand how RAMs affect the stability of IN, as well as the binding of the drug Dolutegravir to the catalytic pocket of the protein. Molecular modelling of HIV-1C IN was performed using the SWISS-MODEL webserver; with quality assessment performed using internal methods and external software tools. The site directed mutator webserver was used to predict destabilizing and/or stabilizing effects of known RAMs while FoldX confirmed any changes in protein energy upon introduction of mutation. Interaction analysis between neighbouring residues was done using PyMOL. Three randomly selected mutations were chosen for molecular dynamic simulation studies using Gromacs. Trajectory analysis included Root mean square deviation and fluctuation, Radius of gyration, Principal component analysis and Interaction analysis between Dolutegravir and protein residues. The structural quality assessment indicated high reliability of the HIV-1C IN tetrameric structure, with more than 90% confidence in modelled regions. Change in free energy for the G140S mutant indicated a stabilizing effect and simulation analysis showed it to affect structural stability and flexibility of the protein structure. This was further supported by the drug being expelled from the G140S mutant active site, as indicated by interaction analysis. Our findings suggest the G140S mutant has a strong effect on the HIV-1C IN protein structure and Dolutegravir binding and should be validated using laboratory-based experiments. This approach can be applied to determine the effect of other mutations/variants on HIV-1C integrase drug binding.

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TEM evaluation of graded SixGe1-x heterolayers

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100088786 ◽

1991 ◽

Vol 49 ◽

pp. 894-895

Author(s):

N. David Theodore ◽

Mamoru Tomozane ◽

Ming Liaw

Keyword(s):

Heterojunction Bipolar Transistors ◽

Gas Flow ◽

Field Effect Transistors ◽

Chemical Vapor ◽

Dark Field ◽

Bipolar Transistors ◽

Structural Quality ◽

Weak Beam ◽

Transmission Electron ◽

And Behavior

There is extensive interest in SiGe for use in heterojunction bipolar transistors. SiGe/Si superlattices are also of interest because of their potential for use in infrared detectors and field-effect transistors. The processing required for these materials is quite compatible with existing silicon technology. However, before SiGe can be used extensively for devices, there is a need to understand and then control the origin and behavior of defects in the materials. The present study was aimed at investigating the structural quality of, and the behavior of defects in, graded SiGe layers grown by chemical vapor deposition (CVD).The structures investigated in this study consisted of Si1-xGex[x=0.16]/Si1-xGex[x= 0.14, 0.13, 0.12, 0.10, 0.09, 0.07, 0.05, 0.04, 0.005, 0]/epi-Si/substrate heterolayers grown by CVD. The Si1-xGex layers were isochronally grown [t = 0.4 minutes per layer], with gas-flow rates being adjusted to control composition. Cross-section TEM specimens were prepared in the 110 geometry. These were then analyzed using two-beam bright-field, dark-field and weak-beam images. A JEOL JEM 200CX transmission electron microscope was used, operating at 200 kV.

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