Characterization of Single Event Transient Effects in Standard Delay Cells

Author(s):  
Marko Andjelkovic ◽  
Oliver Schrape ◽  
Anselm Breitenreiter ◽  
Milos Krstic ◽  
Rolf Kraemer
2018 ◽  
Vol 17 (4) ◽  
pp. 1608-1614 ◽  
Author(s):  
Zhenyu Wu ◽  
Benneng Zhu ◽  
Tengyue Yi ◽  
Chao Li ◽  
Yi Liu ◽  
...  

Symmetry ◽  
2019 ◽  
Vol 11 (2) ◽  
pp. 154 ◽  
Author(s):  
Jizuo Zhang ◽  
Jianjun Chen ◽  
Pengcheng Huang ◽  
Shouping Li ◽  
Liang Fang

In a triple-well NMOSFET, a deep n+ well (DNW) is buried in the substrate to isolate the substrate noise. The presence of this deep n+ well leads to changes in single-event transient effects compared to bulk NMOSFET. In space, a single cosmic particle can deposit enough charge in the sensitive volume of a semiconductor device to cause a potential change in the transient state, that is, a single-event transient (SET). In this study, a quantitative characterization of the effect of a DNW on a SET in a 65 nm triple-well NMOSFET was performed using heavy ion experiments. Compared with a bulk NMOSFET, the experimental data show that the percentages of average increase of a SET pulse width are 22% (at linear energy transfer (LET) = 37.4 MeV·cm2/mg) and 23% (at LET = 22.2 MeV·cm2/mg) in a triple-well NMOSFET. This study indicates that a triple-well NMOSFET is more sensitive to a SET, which means that it may not be appropriate for radiation hardened integrated circuit design compared with a bulk NMOSFET.


2002 ◽  
Vol 49 (3) ◽  
pp. 1502-1508 ◽  
Author(s):  
S. Buchner ◽  
D. McMorrow ◽  
A. Sternberg ◽  
L. Massengill ◽  
R.L. Pease ◽  
...  

2006 ◽  
Vol 6 (4) ◽  
pp. 542-549 ◽  
Author(s):  
Balaji Narasimham ◽  
Vishwa Ramachandran ◽  
Bharat L. Bhuva ◽  
Ronald D. Schrimpf ◽  
Arthur F. Witulski ◽  
...  

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