Low Actuation Voltage RF MEMS Shunt Capacitive Switch with High Capacitive Ratio

2018 ◽  
Author(s):  
Hamid Reza Ansari ◽  
Saeed Khosroabadi
Keyword(s):  
Rf Mems ◽  
Actuation Voltage ◽  
Capacitive Switch

scholarly journals Design and simulation of low actuation voltage RF MEMS shunt capacitive switch with serpentine flexures&rectangular perforations

2018 ◽  
Vol 7 (2.31) ◽  
pp. 4 ◽  
Author(s):  
K Jayavardhani ◽  
S K. Noureen Fathima ◽  
K Bhima Sankar ◽  
K Kavya Sri ◽  
S Sunithamani
Keyword(s):  
Insertion Loss ◽  
Rf Mems ◽  
Actuation Voltage ◽  
Air Gap ◽  
Spring Constant ◽  
Squeeze Film ◽  
Capacitive Switch ◽  
High Isolation ◽  
Low Insertion Loss ◽  
Rf Performance

This paper presents the design and simulation of RF MEMS shunt capacitive switch with low actuation voltage, low insertion loss and high isolation. Actuation voltage depends on the parameters like air gap, spring constant and actuation area. In this design, we have proposed a serpentine meander structure to reduce the spring constant of the beam thus reducing actuation voltage. The rectangular perforation is used to reduce the squeeze film damping by decreasing the mass of the switch. The proposed switch has attained a low actuation voltage of 4.5V for a displacement of 0.84μm. The air gap between the beam and the dielectric is 1μm. This radio frequency (RF) MEMS shunt switch is designed and simulated using COMSOL Multiphysics 5.2. The RF performance of the shunt switch is analyzed in Ansoft HFSS 13 and the results show that the return loss was about -13.50 dB at 20GHz in the OFF state and -8.5 dB at 18 GHz in the ON state. A high isolation of -36.00 dB was achieved in the OFF state at a frequency of 5GHz and a low insertion loss is obtained. The results show that the switch is suitable for wireless applications operating in the frequency range from 5 to 20GHz. 

Application of RF MEMS Switch for Reconfiguring Micromachined Antennas

2014 ◽  
Vol 704 ◽  
pp. 293-298
Author(s):  
Jija Rajmohan ◽  
M.R. Baiju
Keyword(s):  
Rf Mems ◽  
Low Voltage ◽  
Actuation Voltage ◽  
Rf Mems Switch ◽  
Capacitive Switch ◽  
Mems Switches ◽  
Wireless Applications ◽  
Mems Switch ◽  
Rf Components ◽  
Rf Mems Switches

For mobile and wireless applications where the size of the system has to be minimized, antenna and RF components are to be integrated on to the same substrate. The contradicting requirements of the substrate with respect to the antenna and the RF circuit can be resolved by using micromachined antennas. If the principle of reconfigurability is applied to the micromachined antenna, it increases the versatality of the system. This paper proposes reconfigurability of micromachined antennas using RF MEMS switches. In the case of micromachined antennas, which involve low voltage signals, RF MEMS switches with low actuation voltage are required for achieving reconfigurability. In this paper an RF MEMS capacitive switch operating at a low actuation voltage of 1 Volt is presented

scholarly journals Low Actuating Voltage Spring-Free RF MEMS SPDT Switch

2016 ◽  
Vol 2016 ◽  
pp. 1-7 ◽  
Author(s):  
Deepak Bansal ◽  
Anuroop Bajpai ◽  
Prem Kumar ◽  
Maninder Kaur ◽  
Kamljit Rangra
Keyword(s):  
Rf Mems ◽  
Switching Time ◽  
Actuation Voltage ◽  
Electromagnetic Response ◽  
Mems Devices ◽  
Switching Speed ◽  
Capacitive Switch ◽  
Mems Switch ◽  
Line Insertion ◽  
Better Than

RF MEMS devices are known to be superior to their solid state counterparts in terms of power consumption and electromagnetic response. Major limitations of MEMS devices are their low switching speed, high actuation voltage, larger size, and reliability. In the present paper, a see-saw single pole double throw (SPDT) RF MEMS switch based on anchor-free mechanism is proposed which eliminates the above-mentioned disadvantages. The proposed switch has a switching time of 394 nsec with actuation voltage of 5 V. Size of the SPDT switch is reduced by utilizing a single series capacitive switch compared to conventional switches with capacitive and series combinations. Reliability of the switch is improved by adding floating metal and reducing stiction between the actuating bridge and transmission line. Insertion loss and isolation are better than −0.6 dB and −20 dB, respectively, for 1 GHz to 20 GHz applications.

Sign in / Sign up

Export Citation Format

Share Document