scholarly journals Low Actuating Voltage Spring-Free RF MEMS SPDT Switch

2016 ◽  
Vol 2016 ◽  
pp. 1-7 ◽  
Author(s):  
Deepak Bansal ◽  
Anuroop Bajpai ◽  
Prem Kumar ◽  
Maninder Kaur ◽  
Kamljit Rangra
Keyword(s):  
Rf Mems ◽  
Switching Time ◽  
Actuation Voltage ◽  
Electromagnetic Response ◽  
Mems Devices ◽  
Switching Speed ◽  
Capacitive Switch ◽  
Mems Switch ◽  
Line Insertion ◽  
Better Than

RF MEMS devices are known to be superior to their solid state counterparts in terms of power consumption and electromagnetic response. Major limitations of MEMS devices are their low switching speed, high actuation voltage, larger size, and reliability. In the present paper, a see-saw single pole double throw (SPDT) RF MEMS switch based on anchor-free mechanism is proposed which eliminates the above-mentioned disadvantages. The proposed switch has a switching time of 394 nsec with actuation voltage of 5 V. Size of the SPDT switch is reduced by utilizing a single series capacitive switch compared to conventional switches with capacitive and series combinations. Reliability of the switch is improved by adding floating metal and reducing stiction between the actuating bridge and transmission line. Insertion loss and isolation are better than −0.6 dB and −20 dB, respectively, for 1 GHz to 20 GHz applications.

scholarly journals Development of Broadband Low Actuation Voltage RF MEM Switches

2002 ◽  
Vol 25 (1) ◽  
pp. 97-111 ◽  
Author(s):  
S. C. Shen ◽  
D. Becher ◽  
Z. Fan ◽  
D. Caruth ◽  
Milton Feng
Keyword(s):  
Insertion Loss ◽  
Integrated Circuit ◽  
Rf Mems ◽  
Low Voltage ◽  
Actuation Voltage ◽  
University Of Illinois ◽  
Mems Switch ◽  
The University ◽  
Better Than ◽  
Millimeter Wave Circuits

Low insertion loss, high isolation RF MEM switches have been thought of as one of the most attractive devices for space-based reconfigurable antenna and integrated circuit applications. Many RF MEMS switch topologies have been reported and they all show superior RF characteristics compared to semiconductor-based counterparts. At the University of Illinois, we developed state-of-the-art broadband low-voltage RF MEM switches using cantilever and hinged topologies. We demonstrated promisingsub-10volts operation for both switch topologies.The switches have an insertion loss of less than 0:1 dB, and an isolation of better than 25 dB over the frequency range from 0.25 to 40 GHz. The RF Model of the MEM switch was also established. The low voltage RF MEM switches will provide a solution for low voltage and highly linear switching methods for the next generation of broadband RF, microwave, and millimeter-wave circuits.

Fabrication of an RF-MEMS-Switch on a hybrid Si-Ceramic substrate

2016 ◽  
Vol 2016 (CICMT) ◽  
pp. 000118-000121
Author(s):  
S. Gropp ◽  
M. Fischer ◽  
A. Frank ◽  
C. Schäffel ◽  
J. Müller ◽  
...  
Keyword(s):  
Rf Mems ◽  
Actuation Voltage ◽  
Ceramic Substrate ◽  
Mems Devices ◽  
Carbon Paste ◽  
Wafer Level ◽  
Rf Mems Switch ◽  
Suitable Material ◽  
Mems Switch ◽  
Composite Substrate

Abstract The integration of MEMS sensors, microelectronics and RF circuits including RF-MEMS is still a challenging task but becomes crucial for the Internet of Things. A wafer-level silicon-ceramic composite substrate (called SiCer, Silicon-on-Ceramics) allows new options in smart system integration. SiCer substrates combine the benefits of two different worlds of materials. The silicon substrate is a suitable material to build active MEMS devices such as switches and resonators. The ceramic substrate, a Low Temperature Cofired Ceramic (LTCC), is well-known for RF circuit integration including resistors, capacitors and coils. Both materials are co-sintered into a monolithically composite substrate. Chemical and physical modification of the silicon interface allows a low-pressure sintering and therefore new techniques for generating buried cavities at the bond interface. A carbon paste is applied on the LTCC via screen printing. After sintering, this results in a defined cavity. To demonstrate the advantages of the buried cavities within SiCer substrates the fabrication process of a RF-MEMS switch is shown. The switch is intended for a switching matrix to select frequency bands in a mobile LTE receiver. A parallel-plate electrostatic actuation with in-plane movement has been selected. This type of switch allows a large displacement range and a low actuation voltage can be achieved.

Design and Simulation of a High-Isolation Series/Shunt Mixed MEMS Switch

2013 ◽  
Vol 457-458 ◽  
pp. 1644-1647
Author(s):  
Zhong Liang Deng ◽  
Sen Fan ◽  
Hao Wei ◽  
Cai Hu Chen ◽  
Hua Gong
Keyword(s):  
Rf Mems ◽  
Actuation Voltage ◽  
Gold Surface ◽  
Mixed Structure ◽  
Micro Fabrication ◽  
High Isolation ◽  
Mems Switch ◽  
Folded Structure ◽  
Wide Range ◽  
Better Than

In this paper, a novel high isolation switch was designed and optimized on high-resistance silicon substrate with all-metal beams. The RF MEMS switch was modeled with gold surface micro-fabrication process. To obtain a low actuation voltage and a better isolation, a folded structure in the shunt part of the switch and a short capacitance in the series part were designed, respectively. By combining the series and shunt switches, the mixed structure offered a wide range (DC-40GHz) with excellent isolation better than-35dB and insertion loss less than 0.72dB at the same range, making it promising for applications with wide frequency bands.

Application of RF MEMS Switch for Reconfiguring Micromachined Antennas

2014 ◽  
Vol 704 ◽  
pp. 293-298
Author(s):  
Jija Rajmohan ◽  
M.R. Baiju
Keyword(s):  
Rf Mems ◽  
Low Voltage ◽  
Actuation Voltage ◽  
Rf Mems Switch ◽  
Capacitive Switch ◽  
Mems Switches ◽  
Wireless Applications ◽  
Mems Switch ◽  
Rf Components ◽  
Rf Mems Switches

For mobile and wireless applications where the size of the system has to be minimized, antenna and RF components are to be integrated on to the same substrate. The contradicting requirements of the substrate with respect to the antenna and the RF circuit can be resolved by using micromachined antennas. If the principle of reconfigurability is applied to the micromachined antenna, it increases the versatality of the system. This paper proposes reconfigurability of micromachined antennas using RF MEMS switches. In the case of micromachined antennas, which involve low voltage signals, RF MEMS switches with low actuation voltage are required for achieving reconfigurability. In this paper an RF MEMS capacitive switch operating at a low actuation voltage of 1 Volt is presented

scholarly journals Design and Analysis of Reconfigurable DMTL phase Shifter for High Speed Applications by Mechanical Tuning

2020 ◽  
Vol 9 (4) ◽  
pp. 333-339
Keyword(s):  
High Speed ◽  
Phase Shifter ◽  
Rf Mems ◽  
Planar Waveguides ◽  
Stress Factors ◽  
Mems Devices ◽  
Rf Switch ◽  
Switching Speed ◽  
Mems Switch ◽  
Mechanical Tuning

Tremendous advancement in the field of Radio-frequency were developed through Micro-fabrication techniques, these technologies miniaturize device in a micro-scale behavior for improved device performances. These technologies are developing rapidly due to its distinct features and wide usage in various applications ranging from switches to sensing devices. The principal behind this work is to build a MEMS based Reconfigurable DMTL phase shifter based on RF MEMS switch with improved device phenomenon like switching speed, low actuating voltage, losses and stress factors. The RF switch is build in a series behavior through co-planar waveguides. Generally switching speed is a major concern in RF MEMS devices because of the presence of the actuating elements within the structure which in turn hinders the device ability to function. The phase shifter designed helps in improving the overall switching speed of the device without electrical or dimension alternation of the device. In this paper, we are implementing a PUSH PULL based RF MEMS reconfigurable switch which was structurally altered based on triangular cantilevers in order to enhance the device switching speed. This would develop and enable better application in terms of reconfigurable phase shifter which can be operated at the wider bandgap applications. Even the resonant frequency enhancement was made which provokes an increase of 13% in terms of the switching speed.

Analysis and optimization of two movable plates RF MEMS switch for simultaneous improvement in actuation voltage and switching time

2010 ◽  
Vol 41 (5) ◽  
pp. 257-265 ◽  
Author(s):  
A. Kundu ◽  
S. Sethi ◽  
N.C. Mondal ◽  
B. Gupta ◽  
S.K. Lahiri ◽  
...  
Keyword(s):  
Rf Mems ◽  
Switching Time ◽  
Actuation Voltage ◽  
Rf Mems Switch ◽  
Mems Switch

scholarly journals Design and Analysis of Shunt Configuration-Based RF MEMS Switch

2019 ◽  
Vol 8 (9) ◽  
pp. 2034-2039
Keyword(s):  
Insertion Loss ◽  
Return Loss ◽  
Rf Mems ◽  
Actuation Voltage ◽  
Beam Width ◽  
Switching Speed ◽  
Rf Mems Switch ◽  
Mems Switch ◽  
Capacitance Ratio ◽  
State Capacitance

In this paper a shunt type RF MEMS switch design and analysis for tunable applications is presented. Switch works based on the electrostatic actuation principle. Theoretical calculated Switch parameters are compared with the electromechanical and electromagnetic simulation results. The effect of various materials like conductor and dielectrics & parameters like airgap, beam width on the electromechanical parameters of the switch is analyzed to get low pull-in voltage, high switching speed, better capacitance ratio, return loss, insertion loss, and isolation loss. The switch up and down state capacitance are 40.9fF and 4.45pF respectively. Down to up state capacitance ratio of this switch is 108.69. The designed switch has an actuation voltage of 32V. RF performance is simulated from 1-10GHz. In ON state switch has return loss of -35dB, insertion loss of -0.1dB. In the OFF-state switch has return loss of -1dB and an isolation loss of -11dB.

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