DC and microwave characteristics of metamorphic InP/In/sub 0.53/Ga/sub 0.47/As heterojunction bipolar transistors grown on GaAs substrates

Conference Proceedings. 2000 International Conference on Indium Phosphide and Related Materials (Cat. No.00CH37107) ◽

10.1109/iciprm.2000.850275 ◽

2002 ◽

Author(s):

Hong Wang ◽

Geok Ing Ng ◽

Haiqun Zheng ◽

Lye Heng Chua ◽

Yong Zhong Xiong

Keyword(s):

Heterojunction Bipolar Transistors ◽

Bipolar Transistors ◽

Gaas Substrates ◽

Microwave Characteristics

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D.c. and microwave characteristics of In0.32Al0.68As/In0.33Ga0.67As heterojunction bipolar transistors grown on GaAs

Solid-State Electronics ◽

10.1016/s0038-1101(98)00310-4 ◽

1999 ◽

Vol 43 (3) ◽

pp. 463-468 ◽

Author(s):

Hann-Ping Hwang ◽

Jia-Lin Shieh ◽

Jen-Inn Chyi

Keyword(s):

Heterojunction Bipolar Transistors ◽

Bipolar Transistors ◽

Microwave Characteristics

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Metamorphic heterojunction bipolar transistors and P–I–N photodiodes on GaAs substrates prepared by molecular beam epitaxy

Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena ◽

10.1116/1.1374624 ◽

2001 ◽

Vol 19 (4) ◽

pp. 1505 ◽

Author(s):

W. E. Hoke ◽

P. J. Lemonias ◽

T. D. Kennedy ◽

A. Torabi ◽

E. K. Tong ◽

...

Keyword(s):

Molecular Beam Epitaxy ◽

Heterojunction Bipolar Transistors ◽

Molecular Beam ◽

Bipolar Transistors ◽

Gaas Substrates

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InP/In0.53Ga0.47As/InP double heterojunction bipolar transistors on GaAs substrates using InP metamorphic buffer layer

Solid-State Electronics ◽

10.1016/s0038-1101(02)00102-8 ◽

2002 ◽

Vol 46 (10) ◽

pp. 1541-1544 ◽

Author(s):

Y.M Kim ◽

M Dahlstrǒm ◽

S Lee ◽

M.J.W Rodwell ◽

A.C Gossard

Keyword(s):

Buffer Layer ◽

Heterojunction Bipolar Transistors ◽

Bipolar Transistors ◽

Metamorphic Buffer ◽

Gaas Substrates ◽

Double Heterojunction

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Lattice-Mismatched InGaAs Double Heterojunction Bipolar Transistors Grown on GaAs Substrates

Japanese Journal of Applied Physics ◽

10.1143/jjap.32.4923 ◽

1993 ◽

Vol 32 (Part 1, No. 11A) ◽

pp. 4923-4927

Author(s):

Hiroshi Ito ◽

James S. Harris

Keyword(s):

Heterojunction Bipolar Transistors ◽

Bipolar Transistors ◽

Gaas Substrates ◽

Double Heterojunction

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Elevated temperature microwave characteristics of heterojunction bipolar transistors

15th Annual GaAs IC Symposium ◽

10.1109/gaas.1993.394454 ◽

2002 ◽

Author(s):

D.S. Whitefield ◽

C.J. Wei ◽

J.C.M. Hwang

Keyword(s):

Elevated Temperature ◽

Heterojunction Bipolar Transistors ◽

Bipolar Transistors ◽

Microwave Characteristics

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200 GHz f/sub max/, f/sub τ/ InP/In/sub 0.53/Ga/sub 0.47/As/InP metamorphic double heterojunction bipolar transistors on GaAs substrates

International Conference onIndium Phosphide and Related Materials, 2003. ◽

10.1109/iciprm.2003.1205334 ◽

2003 ◽

Author(s):

Y.M. Kim ◽

M. Urteaga ◽

M. Dahlstrom ◽

M.M. Rodwell ◽

A.C. Gossard

Keyword(s):

Heterojunction Bipolar Transistors ◽

Bipolar Transistors ◽

Gaas Substrates ◽

Double Heterojunction

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Demonstration of aluminum-free metamorphic InP/In/sub 0.53/Ga/sub 0.47/As/InP double heterojunction bipolar transistors on GaAs substrates

IEEE Electron Device Letters ◽

10.1109/55.863099 ◽

2000 ◽

Vol 21 (9) ◽

pp. 427-429 ◽

Author(s):

Hong Wang ◽

Geok Ing Ng ◽

Haiqun Zheng ◽

Yong Zhong Xiong ◽

Lye Heng Chua ◽

...

Keyword(s):

Heterojunction Bipolar Transistors ◽

Bipolar Transistors ◽

Gaas Substrates ◽

Double Heterojunction

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Thermal characteristics of InP, InAlAs, and AlGaAsSb metamorphic buffer layers used in In0.52Al0.48As/In0.53Ga0.47As heterojunction bipolar transistors grown on GaAs substrates

Journal of Electronic Materials ◽

10.1007/s11664-002-0206-4 ◽

2002 ◽

Vol 31 (3) ◽

pp. 196-199 ◽

Author(s):

Y. M. Kim ◽

M. J. W. Rodwell ◽

A. C. Gossard

Keyword(s):

Heterojunction Bipolar Transistors ◽

Thermal Characteristics ◽

Bipolar Transistors ◽

Buffer Layers ◽

Metamorphic Buffer ◽

Gaas Substrates

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Thermal properties of metamorphic buffer materials for growth of inp double heterojunction bipolar transistors on gaas substrates

IEEE Transactions on Electron Devices ◽

10.1109/ted.2003.813225 ◽

2003 ◽

Vol 50 (5) ◽

pp. 1411-1413 ◽

Author(s):

Y.M. Kim ◽

M. Dahlstrom ◽

M.J.W. Rodwell ◽

A.C. Gossard

Keyword(s):

Thermal Properties ◽

Heterojunction Bipolar Transistors ◽

Bipolar Transistors ◽

Metamorphic Buffer ◽

Gaas Substrates ◽

Double Heterojunction

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Small-signal microwave characteristics of heterojunction bipolar transistors using 1D numerical simulation including thermal and parasitic effects

Solid-State Electronics ◽

10.1016/0038-1101(95)00419-x ◽

1996 ◽

Vol 39 (7) ◽

pp. 1104-1108 ◽

Author(s):

L.L. Liou ◽

T. Jenkins ◽

J. Barrette ◽

D. Barlage ◽

R. Lee

Keyword(s):

Numerical Simulation ◽

Heterojunction Bipolar Transistors ◽

Bipolar Transistors ◽

Small Signal ◽

Parasitic Effects ◽

1D Numerical Simulation ◽

Microwave Characteristics

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