Floating Memristor Emulator Using Current Biased OTAs and Single Grounded Capacitance

Purpose The purpose of this paper is to design and construct an amplitude shift keying (ASK) modulator, which, using the digital binary modulating signal, controls a floating memristor emulator (MR) internally without the need for additional control circuits to achieve the ASK modulated wave. Design/methodology/approach A binary digital unipolar signal to be modulated is converted by a pre-processor circuit into a suitable bipolar modulating direct current (DC) signal for the control of the MR state, using current conveyors the carrier signal’s amplitude is varied with the change in the memristance of the floating MR. A high pass filter is then used to remove the DC control signal (modulating signal) leaving only the modulated carrier signal. Findings The results from the experiment and simulation are in agreement showed that the MR can be switched between two states and that a change in the carrier signals amplitude can be achieved by using an MR. Thus, showing that the circuit behavior is in line with the proposed theory and validating the said theory. Originality/value In this paper, the binary signal to be modulated is modified into a suitable control signal for the MR, thus the MR relies on the internal operation of the modulator circuit for the control of its memristance. An ASK modulation can then be achieved using a floating memristor without the need for additional circuits or signals to control its memristance.

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Realization of floating triple crossing memristor emulator with dual inflection point static characteristics

Analog Integrated Circuits and Signal Processing ◽

10.1007/s10470-021-01937-5 ◽

2021 ◽

Author(s):

Kapil Bhardwaj ◽

Mayank Srivastava

Keyword(s):

Inflection Point ◽

Static Characteristics ◽

Memristor Emulator

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Floating Memristor and Inverse Memristor Emulators with Electronic Tuning

Journal of Circuits System and Computers ◽

10.1142/s0218126621502248 ◽

2021 ◽

pp. 2150224

Author(s):

Kapil Bhardwaj ◽

Mayank Srivastava

Keyword(s):

Active Element ◽

The Other ◽

Mathematical Properties ◽

Process Technique ◽

Transconductance Amplifier ◽

Electronic Tuning ◽

Memristor Emulator

The work reports two different configurations to emulate the floating memristor and inverse memristor behavior. The presented circuits are based on a modified concept of active element VDTA (Voltage Differencing Transconductance Amplifier) termed as MVDTA. The reported floating memristor employs only a single MVDTA and single grounded capacitance. On the other end, the floating emulation circuit of inverse memristor emulator is based on two MVDTAs and single grounded capacitance. The behavior of the realized element for both the configurations can be tuned electronically through biasing voltage. Also, there is no employment of any commercial IC or external circuitry for multiplication of analogue voltages which is generally required to implement memristive elements. Along with the circuit implementations, mathematical properties of ideal memristor and inverse memristor considering both symmetric as well as nonsymmetric models are discussed. All the emulation circuits are verified by executing simulations using CMOS 0.18[Formula: see text]um process technique under PSPICE environment. The reported circuits are also realized using commercially available IC LM13700 and results are presented.

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A two-transistor non-ideal memristor emulator

2016 5th International Conference on Modern Circuits and Systems Technologies (MOCAST) ◽

10.1109/mocast.2016.7495164 ◽

2016 ◽

Cited By ~ 2

Author(s):

John Kalomiros ◽

Stavros G. Stavrinides ◽

Fernando Corinto

Keyword(s):

Memristor Emulator

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