Extreme Multistability and Antimonotonicity in a Shinriki Oscillator with Two Flux-Controlled Memristors

This paper proposes a novel memristive chaotic circuit which originated from a Shinriki oscillator with two flux-controlled memristors of different polarities. This two-memristor-based Shinriki oscillator (TMSO) having a special plane equilibrium is prone to exhibiting the initial-dependent phenomenon of extreme multistability. To investigate its internal dynamics, a third-order dimensionality reduction model is established by utilizing the constitutive relationship of its memristor’s flux and charge. The uncertain plane equilibrium is transfered into some deterministic model that can accurately predict the dynamical evolution of the system, where interesting phenomena of asymmetric bifurcations, extreme multistability and antimonotonicity are detected and analyzed by evaluating the position and stability of the equilibria in the flux–charge model. The simulation is carried out via Multisim to validate the analysis model, and the comparison of the phase trajectories, before and after dimensionality reduction, shows that this oscillator is good for research and practical use.

Recent Advances in Dimensionality Reduction Modeling and Multistability Reconstitution of Memristive Circuit

Due to the introduction of memristors, the memristor-based nonlinear oscillator circuits readily present the state initial-dependent multistability (or extreme multistability), i.e., coexisting multiple attractors (or coexisting infinitely many attractors). The dimensionality reduction modeling for a memristive circuit is carried out to realize accurate prediction, quantitative analysis, and physical control of its multistability, which has become one of the hottest research topics in the field of information science. Based on these considerations, this paper briefly reviews the specific multistability phenomenon generating from the memristive circuit in the voltage-current domain and expounds the multistability control strategy. Then, this paper introduces the accurate flux-charge constitutive relation of memristors. Afterwards, the dimensionality reduction modeling method of the memristive circuits, i.e., the incremental flux-charge analysis method, is emphatically introduced, whose core idea is to implement the explicit expressions of the initial conditions in the flux-charge model and to discuss the feasibility and effectiveness of the multistability reconstitution of the memristive circuits using their flux-charge models. Furthermore, the incremental integral transformation method for modeling of the memristive system is reviewed by following the idea of the incremental flux-charge analysis method. The theory and application promotion of the dimensionality reduction modeling and multistability reconstitution are proceeded, and the application prospect is prospected by taking the synchronization application of the memristor-coupled system as an example.

Superconducting insulators and localization of Cooper pairs

Rapid miniaturization of electronic devices and circuits demands profound understanding of fluctuation phenomena at the nanoscale. Superconducting nanowires – serving as important building blocks for such devices – may seriously suffer from fluctuations which tend to destroy long-range order and suppress superconductivity. In particular, quantum phase slips (QPS) proliferating at low temperatures may turn a quasi-one-dimensional superconductor into a resistor or an insulator. Here, we introduce a physical concept of QPS-controlled localization of Cooper pairs that may occur even in uniform nanowires without any dielectric barriers being a fundamental manifestation of the flux-charge duality in superconductors. We demonstrate – both experimentally and theoretically – that deep in the “insulating” state such nanowires actually exhibit non-trivial superposition of superconductivity and weak Coulomb blockade of Cooper pairs generated by quantum tunneling of magnetic fluxons across the wire.

Blinking Networks of Memristor Oscillatory Circuits in the Flux-Charge Domain

Multistability phenomena and complex nonlinear dynamics in memristor oscillators pave the way to obtain efficient solutions to optimization problems by means of novel computational architectures based on the interconnection of single–device oscillators. It is well-known that topological properties of interconnections permit to control synchronization and spatio–temporal patterns in oscillatory networks. When the interconnections can change in time with a given probability to connect two oscillators, the whole network acts as a complex network with blinking couplings. The work of has shown that a particular class of blinking complex networks are able to completely synchronize in a faster fashion with respect to other coupling strategies. This work focuses on the specific class of blinking complex networks made of Memristor–based Oscillatory Circuits (MOCs). By exploiting the recent Flux–Charge Analysis Method, we make clear that synchronization phenomena in blinking networks of memristor oscillators having stochastic couplings, i.e., Blinking Memristor Oscillatory Networks (BMONs), correspond to global periodic oscillations on invariant manifolds and the effect of a blinking link is to shift the nonlinear dynamics through the infinite (invariant) manifolds. Numerical simulations performed on MOCs prove that synchronization phenomena can be controlled just by changing the coupling amongst them.

SPICE Behaviors of Double Memristor Circuits Using Cosine Window Function

In this paper, a Hewlett-Packard (HP) memristor model with a new window function and its versatile characteristics are presented. SPICE behaviors of the linear and nonlinear memristor model are studied through PSpice simulation. High flexibility is demonstrated for emulating the behaviors of the practical HP memristors. Furthermore, the characteristics of the composite SPICE behaviors are both investigated when two memristors are connected in series and in parallel. The polarity of each memristor is also taken into consideration. The relationships among flux, charge, voltage, current, and memristance of the double memristor circuits are simulated and analyzed.

Ultra-fast charging in aluminum-ion batteries: electric double layers on active anode

With the rapid iteration of portable electronics and electric vehicles, developing high-capacity batteries with ultra-fast charging capability has become a holy grail. Here we report rechargeable aluminum-ion batteries capable of reaching a high specific capacity of 200 mAh g−1. When liquid metal is further used to lower the energy barrier from the anode, fastest charging rate of 104 C (duration of 0.35 s to reach a full capacity) and 500% more specific capacity under high-rate conditions are achieved. Phase boundaries from the active anode are believed to encourage a high-flux charge transfer through the electric double layers. As a result, cationic layers inside the electric double layers responded with a swift change in molecular conformation, but anionic layers adopted a polymer-like configuration to facilitate the change in composition.