Analytical model of collector current density and base transit time

Mapping Intimacies ◽

10.1109/icsict.1995.503362 ◽

2002 ◽

Author(s):

Pingxi Ma ◽

Lichun Zhang ◽

Yangyuan Wang

Keyword(s):

Analytical Model ◽

Transit Time ◽

Current Density ◽

Collector Current

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Analytical model of collector current density and base transit time based on iteration method

Solid-State Electronics ◽

10.1016/0038-1101(96)00076-7 ◽

1996 ◽

Vol 39 (11) ◽

pp. 1683-1686 ◽

Author(s):

P. Ma ◽

L. Zhang ◽

Y. Wang

Keyword(s):

Analytical Model ◽

Transit Time ◽

Current Density ◽

Iteration Method ◽

Collector Current

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A new set of initial conditions for fast and accurate calculation of base transit time and collector current density in bipolar transistors

Solid-State Electronics ◽

10.1016/s0038-1101(98)00174-9 ◽

1998 ◽

Vol 42 (11) ◽

pp. 2023-2026 ◽

Author(s):

Pingxi Ma ◽

Shi-Li Zhang ◽

Mikael Östling

Keyword(s):

Transit Time ◽

Current Density ◽

Initial Conditions ◽

Bipolar Transistors ◽

Accurate Calculation ◽

Collector Current

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Analytical relations pertaining to collector current density and base transit time in bipolar transistors

Solid-State Electronics ◽

10.1016/0038-1101(95)00140-o ◽

1996 ◽

Vol 39 (1) ◽

pp. 173-175 ◽

Author(s):

Pingxi Ma ◽

Lichun Zhang ◽

Yangyuan Wang

Keyword(s):

Transit Time ◽

Current Density ◽

Bipolar Transistors ◽

Collector Current ◽

Analytical Relations

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Analytical collector current density and base transit time models for high-injection regions

International Technical Digest on Electron Devices Meeting ◽

10.1109/iedm.1992.307389 ◽

1992 ◽

Author(s):

Suzuki

Keyword(s):

Transit Time ◽

Current Density ◽

Collector Current ◽

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Analytical model for the current density in the electrochemical synthesis of porous silicon structures with a lateral gradient

Optical Materials ◽

10.1016/j.optmat.2021.110859 ◽

2021 ◽

Vol 113 ◽

pp. 110859

Author(s):

C.A. Ospina-Delacruz ◽

V. Agarwal ◽

W.L. Mochán

Keyword(s):

Porous Silicon ◽

Analytical Model ◽

Current Density ◽

Electrochemical Synthesis ◽

Silicon Structures

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A generalized analytical model for the quantum well injection transit time diode

IEEE Transactions on Electron Devices ◽

10.1109/16.65730 ◽

1991 ◽

Vol 38 (1) ◽

pp. 14-22 ◽

Author(s):

I. Song ◽

D.-S. Pan

Keyword(s):

Quantum Well ◽

Analytical Model ◽

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Study of Cutoff Frequency at High Collector Current Density in SiGe Single-Heterojunction Bipolar Transistor

American Journal of Applied Sciences ◽

10.3844/ajassp.2004.236.239 ◽

2004 ◽

Vol 1 (3) ◽

pp. 236-239 ◽

Author(s):

G. M. Khanduri ◽

B. S. Panwar

Keyword(s):

Current Density ◽

Cutoff Frequency ◽

Bipolar Transistor ◽

Heterojunction Bipolar Transistor ◽

Collector Current

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4H-SiC monolithic Darlington transistors with slight current gain drop at high collector current density

Science China Technological Sciences ◽

10.1007/s11431-017-9208-4 ◽

2018 ◽

Vol 61 (8) ◽

pp. 1238-1243

Author(s):

Lei Yuan ◽

QingWen Song ◽

XiaoYan Tang ◽

HongPeng Zhang ◽

YiMeng Zhang ◽

...

Keyword(s):

Current Density ◽

Current Gain ◽

Collector Current

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Analytical model for base transit time of a bipolar transistor with Gaussian-doped base

Solid-State Electronics ◽

10.1016/j.sse.2006.01.004 ◽

2006 ◽

Vol 50 (3) ◽

pp. 327-332 ◽

Author(s):

M.M. Shahidul Hassan ◽

Touhidur Rahman ◽

Md. Ziaur Rahman Khan

Keyword(s):

Analytical Model ◽

Transit Time ◽

Bipolar Transistor

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Analytical Model for Collector Current Gummel Plots of Heterojunction Bipolar Transistors

2009 Spanish Conference on Electron Devices ◽

10.1109/sced.2009.4800440 ◽

2009 ◽

Author(s):

Dan Sachelarie ◽

Gabriel Predusca

Keyword(s):

Analytical Model ◽

Heterojunction Bipolar Transistors ◽

Bipolar Transistors ◽

Collector Current

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