A generalized analytical model for the quantum well injection transit time diode

IEEE Transactions on Electron Devices ◽

10.1109/16.65730 ◽

1991 ◽

Vol 38 (1) ◽

pp. 14-22 ◽

Author(s):

I. Song ◽

D.-S. Pan

Keyword(s):

Quantum Well ◽

Analytical Model ◽

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Quantum-well injection transit time device

10.1117/12.57001 ◽

1992 ◽

Author(s):

B. B. Pal ◽

R. U. Khan

Keyword(s):

Quantum Well ◽

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A semi-analytical model for III-V semiconductor quantum well field effect transistors

2014 International Conference on Electrical Engineering and Information & Communication Technology ◽

10.1109/iceeict.2014.6919039 ◽

2014 ◽

Author(s):

M. S. Rahman ◽

M. S. Islam ◽

A. Haque

Keyword(s):

Quantum Well ◽

Analytical Model ◽

Field Effect ◽

Field Effect Transistors ◽

Semiconductor Quantum Well

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Quantum well injection transit time (QWITT) diode oscillators

15th International Conference on Infrared and Millimeter Waves ◽

10.1117/12.2301675 ◽

2017 ◽

Author(s):

V. K. Reddy

Keyword(s):

Quantum Well ◽

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Capture and transit-time electron effects in high-frequency operation of multiple quantum well infrared photodetectors

Physica E Low-dimensional Systems and Nanostructures ◽

10.1016/s1386-9477(98)00031-9 ◽

1998 ◽

Vol 2 (1-4) ◽

pp. 142-145 ◽

Author(s):

V Ryzhii ◽

I Khmyrova ◽

M Ryzhii

Keyword(s):

Quantum Well ◽

Transit Time ◽

High Frequency ◽

Multiple Quantum Well ◽

Infrared Photodetectors ◽

Multiple Quantum ◽

Quantum Well Infrared Photodetectors ◽

High Frequency Operation ◽

Electron Effects

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Analytical model for base transit time of a bipolar transistor with Gaussian-doped base

Solid-State Electronics ◽

10.1016/j.sse.2006.01.004 ◽

2006 ◽

Vol 50 (3) ◽

pp. 327-332 ◽

Author(s):

M.M. Shahidul Hassan ◽

Touhidur Rahman ◽

Md. Ziaur Rahman Khan

Keyword(s):

Analytical Model ◽

Transit Time ◽

Bipolar Transistor

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Experimental Derivation of Resonant Tunneling Transit Time Using a Coupled-Quantum-Well Base Transistor

Japanese Journal of Applied Physics ◽

10.1143/jjap.32.l386 ◽

1993 ◽

Vol 32 (Part 2, No. 3B) ◽

pp. L386-L389 ◽

Author(s):

Takao Waho ◽

Takashi Mizutani

Keyword(s):

Quantum Well ◽

Transit Time ◽

Resonant Tunneling ◽

Coupled Quantum Well

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Analysis of Transit Time Effects due to Spacer Layers in Quantum Well Oscillators

Picosecond Electronics and Optoelectronics II - Springer Series in Electronics and Photonics ◽

10.1007/978-3-642-72970-6_25 ◽

1987 ◽

pp. 116-120 ◽

Author(s):

V. P. Kesan ◽

T. D. Linton ◽

P. A. Blakey ◽

D. P. Neikirk ◽

B. G. Streetman

Keyword(s):

Quantum Well ◽

Transit Time ◽

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Semi-analytical model for charge control in SiGe quantum well MOS structures

Solid-State Electronics ◽

10.1016/0038-1101(93)90111-3 ◽

1993 ◽

Vol 36 (7) ◽

pp. 961-968 ◽

Author(s):

Kaushik Bhaumik ◽

Yosef Shacham-Diamand

Keyword(s):

Quantum Well ◽

Analytical Model ◽

Charge Control ◽

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A new transit-time device using quantum-well injection

IEEE Electron Device Letters ◽

10.1109/edl.1987.26576 ◽

1987 ◽

Vol 8 (4) ◽

pp. 129-131 ◽

Author(s):

V.P. Kesan ◽

D.P. Neikirk ◽

B.G. Streetman ◽

P.A. Blakey

Keyword(s):

Quantum Well ◽

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Efficiency and power output of the quantum-well injection transit-time device

IEEE Electron Device Letters ◽

10.1109/edl.1987.26728 ◽

1987 ◽

Vol 8 (12) ◽

pp. 560-562 ◽

Author(s):

Inchae Song ◽

Dee-Son Pan

Keyword(s):

Quantum Well ◽

Transit Time ◽

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