On the applicability of numerical tools for simulating wave-ports close to the cutoff frequency

This paper focuses on a common drawback in electromagnetic numerical computer aided design computer aided design (CAD) tools: high frequency structure simulator (HFSS), computer simulation technology (CST) and FEKO, where the excitation by using a wave-port below and close to the cutoff frequency has unreliable values for the reflection coefficient. An example for such problem is presented in the design of a dual horn antenna fed by two different waveguide sections. To overcome this numerical error in the results of these CAD tools, a tapered waveguide section is used in the simulation as an excitation mechanism to the feeding waveguide. The cross section of the input port at this tapered waveguide section is designed to have a cutoff frequency smaller than the lowest frequency under investigation for the original problem. Then, by extracting the effect of the tapered section from the obtained reflection coefficient, it would be possible to obtain the reflection coefficient of the original problem.

High-Performance InGaAs HEMTs on Si Substrates for RF Applications

In this paper, we have fabricated InGaAs high-electron-mobility transistors (HEMTs) on Si substrates. The InAlAs/InGaAs heterostructures were initially grown on InP substrates by molecular beam epitaxy (MBE), and the adhesive wafer bonding technique was employed to bond the InP substrates to Si substrates, thereby forming high-quality InGaAs channel on Si. The 120 nm gate length device shows a maximum drain current (ID,max) of 569 mA/mm, and the maximum extrinsic transconductance (gm,max) of 1112 mS/mm. The current gain cutoff frequency (fT) is as high as 273 GHz and the maximum oscillation frequency (fMAX) reaches 290 GHz. To the best of our knowledge, the gm,max and the fT of our device are the highest ever reported in InGaAs channel HEMTs on Si substrates at given gate length above 100 nm.

Meander-DGS Effect on Electromagnetic Bandgap Structure for Power/Ground Noise Suppression in High-Speed Integrated Circuit Packages and PCBs

In this paper, we present the impact of a meander-shaped defected ground structure (MDGS) on the slow-wave characteristics of a lowest-order passband and a low cutoff frequency of the first stopband of an electromagnetic bandgap (EBG) structure for power/ground noise suppression in high-speed integrated circuit packages and printed circuit boards (PCBs). A semi-analytical method is presented to rigorously analyze the MDGS effect. In the analytical method, a closed-form expression for a low cutoff frequency of the MDGS-EBG structure is extracted with an effective characteristic impedance and a slow-wave factor. The proposed analytical method enables the fast analysis of the MDGS-EBG structure so that it can be easily optimized. The analysis of the MDGS effect revealed that the low cutoff frequency increases up to approximately 19% while comparing weakly and strongly coupled MDGSs. It showed that the miniaturization of the MDGS-EBG structure can be achieved. It was experimentally verified that the low cutoff frequency is reduced from 2.54 GHz to 2.00 GHz by decreasing the MDGS coupling coefficient, which is associated with the miniaturization of the MDGS-EBG structure in high-speed packages and PCBs.

Ti/TiO2/SiO2 multilayer thin films with enhanced spectral selectivity for optical narrow bandpass filters

Thin film-based optical sensors have been attracting increasing interest for use in developing technologies such as biometrics. Multilayered dielectric thin films with different refractive indices have been utilized to modulate the optical properties in specific wavelength bands for spectral selectivity of Thin Film Narrow Bandpass Filters (TFNBFs). Progress in TFNBF design has been made with the incorporation of metallic thin films. Narrower bandwidths with higher transmittance have been achieved in specific spectral bands. In this work, Ti/TiO2/SiO2 based multilayer thin films were prepared using pulsed-DC reactive sputtering. Computer simulations using the Essential Macleod Program allowed the optimal number of layers and thickness of the multilayer thin films to be determined to efficiently tailor the optical path transmitting specific wavelength bands. The addition of Ti metal layers within dielectric (TiO2/SiO2) multilayer thin films significantly changes the cutoff frequency of transmittance at specific wavelengths. Representative 26 multilayer films consisting of Ti, TiO2, and SiO2 show lower transmittance of 10.29% at 400 nm and 10.48% at 680 nm. High transmittance of 80.42% at 485 nm was observed, which is expected to improve the spectral selectivity of the TFNBF. This work provides a contribution to future simulation based design strategy based on experimental thin film engineering for potential industrial development opportunities such as optical biometrics.

Scaling Behavior of InAlN/GaN HEMTs on Silicon for RF Applications

Due to the low cost and the scaling capability of Si substrate, InAlN/GaN high-electron-mobility transistors (HEMTs) on silicon substrate have attracted more and more attentions. In this paper, a high-performance 50-nm-gate-length InAlN/GaN HEMT on Si with a high on/off current (Ion/Ioff) ratio of 7.28 × 106, an average subthreshold swing (SS) of 72 mV/dec, a low drain-induced barrier lowing (DIBL) of 88 mV, an off-state three-terminal breakdown voltage (BVds) of 36 V, a current/power gain cutoff frequency (fT/fmax) of 140/215 GHz, and a Johnson’s figure-of-merit (JFOM) of 5.04 THz∙V is simultaneously demonstrated. The device extrinsic and intrinsic parameters are extracted using equivalent circuit model, which is verified by the good agreement between simulated and measured S-parameter values. Then the scaling behavior of InAlN/GaN HEMTs on Si is predicted using the extracted extrinsic and intrinsic parameters of devices with different gate lengths (Lg). It presents that a fT/fmax of 230/327 GHz can be achieved when Lg­ scales down to 20 nm with the technology developed in the study, and an improved fT/fmax of 320/535 GHz can be achieved on a 20-nm-gate-length InAlN/GaN HEMT with regrown ohmic contact technology and 30% decreased parasitic capacitance. This study confirms the feasibility of further improvement of InAlN/GaN HEMTs on Si for RF applications.

Scaling Behavior of Sub-100 nm InAlN/GaN HEMTs on Silicon for RF Applications

Due to the low cost and the scaling capability of Si substrate, InAlN/GaN high-electron-mobility transistors (HEMTs) on silicon substrate have attracted more and more attentions. In this paper, a high-performance 50-nm-gate-length InAlN/GaN HEMT on Si with a high on/off current (Ion/Ioff) ratio of 7.28 × 106, an average subthreshold swing (SS) of 72 mV/dec, a low drain-induced barrier lowing (DIBL) of 88 mV, an off-state three-terminal breakdown voltage (BVds) of 36 V, a current/power gain cutoff frequency (fT/fmax) of 140/215 GHz, and a Johnson’s figure-of-merit (JFOM) of 5.04 THz∙V is simultaneously demonstrated. The device extrinsic and intrinsic parameters are extracted using equivalent circuit model, which is verified by the good agreement between simulated and measured S-parameter values. Then the scaling behavior of InAlN/GaN HEMTs on Si is predicted using the extracted extrinsic and intrinsic parameters of devices with different gate lengths (Lg). It presents that a fT/fmax of 230/327 GHz can be achieved when Lg­ scales down to 20 nm with the technology developed in the study, and an improved fT/fmax of 320/535 GHz can be achieved on a 20-nm-gate-length InAlN/GaN HEMT with regrown ohmic contact technology and 30% decreased parasitic capacitance. This study confirms the feasibility of further improvement of InAlN/GaN HEMTs on Si for RF applications.

Half-mode substrate integrated plasmonic waveguide for filter and diplexer designs

A half-mode substrate integrated waveguide (HMSIW) combined with spoof surface plasmon polariton (SSPP) structure is proposed to realize bandpass filter (BPF) characteristic and miniaturization, which is termed as the half-mode substrate integrated plasmonic waveguide (HMSIPW). Compared with the conventional HMSIW structure having identical cutoff frequency, this new design of HMSIPW not only supports SSPP modes, but also realizes a transversal size reduction of 19.4% and longitudinal reduction of more than 60%. Then, a diplexer based on two back-to-back placed HMSIPW BPFs is designed, and it has only one row of metallized via holes to further reduce the transversal size. The experimental prototypes of the filters and diplexer have been manufactured, and the measurement results agree well with simulation ones. Due to the size miniaturization and simple structure, the proposed designs will have many potentials in the integrated devices and circuits for wireless communication systems.

Assessment of weak-coupling approximations on a driven two-level system under dissipation

The standard weak-coupling approximations associated to open quantum systems have been extensively used in the description of a two-level quantum system, qubit, subjected to relatively weak dissipation compared with the qubit frequency. However, recent progress in the experimental implementations of controlled quantum systems with increased levels of on-demand engineered dissipation has motivated precision studies in parameter regimes that question the validity of the approximations, especially in the presence of time-dependent drive fields. In this paper, we address the precision of weak-coupling approximations by studying a driven qubit through the numerically exact and non-perturbative method known as the stochastic Liouville-von Neumann equation with dissipation. By considering weak drive fields and a cold Ohmic environment with a high cutoff frequency, we use the Markovian Lindblad master equation as a point of comparison for the SLED method and study the influence of the bath-induced energy shift on the qubit dynamics. We also propose a metric that may be used in experiments to map the regime of validity of the Lindblad equation in predicting the steady state of the driven qubit. In addition, we study signatures of the well-known Mollow triplet and observe its meltdown owing to dissipation in an experimentally feasible parameter regime of circuit electrodynamics. Besides shedding light on the practical limitations of the Lindblad equation, we expect our results to inspire future experimental research on engineered open quantum systems, the accurate modeling of which may benefit from non-perturbative methods.

Ultrathin and Simple Frequency Selective Rasorber Based on Ferrite Absorber with Embedded Epsilon-Near-Zero Tunneling Channels

An ultrathin and simple frequency-selective rasorber (FSR) with a passband located within a wide absorption band is proposed. The ultrawide absorption band is obtained by employing commercial magnetic materials in the absorption channel and the passband is realized using epsilon-near-zero (ENZ) tunneling waveguides. The attractively ultrathin and simple feature is achieved by utilizing tunneling effect at the cutoff frequency of metallic waveguides with arbitrary length, permitting the overall thickness shrink into to the same as that of the absorber.