Dynamic performance and leakage current characteristics of 1/4-micron-gate ultra-thin CMOS/SIMOX gate array

2002 ◽  
Author(s):  
Y. Kado ◽  
T. Ohno ◽  
Y. Sakakibara ◽  
Y. Kawai ◽  
E. Yamamoto ◽  
...  
Keyword(s):  
Leakage Current ◽  
Dynamic Performance ◽  
Gate Array ◽  
Current Characteristics

Electrical Properties of Srta2O6 Thin Films Deposited by Plasma Enhanced Atomic Layer Deposition (Peald)

2001 ◽  
Vol 685 ◽  
Author(s):  
Won-Jae Lee ◽  
Chang-Ho Shin ◽  
In-Kyu You ◽  
Il-Suk Yang ◽  
Sang-Ouk Ryu ◽  
...  
Keyword(s):  
Thin Films ◽  
Electrical Properties ◽  
Atomic Layer Deposition ◽  
Leakage Current ◽  
Annealing Temperature ◽  
Atomic Layer ◽  
Si Substrates ◽  
Annealing Temperatures ◽  
Layer Deposition ◽  
Current Characteristics

AbstractThe SrTa2O6 (STO) thin films were prepared by plasma enhanced atomic layer deposition (PEALD) with alternating supply of reactant sources, Sr[Ta(C2H5O)5(C4H10NO)]2 {Strontium bis-[tantalum penta-ethoxide dimethyllaminoethoxide]; Sr(Ta(OEt)5▪dmae)2} and O2plasma. It was observed that the uniform and conformal STO thin films were successfully deposited using PEALD and the film thickness per cycle was saturated at about 0.8 nm at 300°C. Electrical properties of SrTa2O6 (STO) thin films prepared on Pt/SiO2/Si substrates with annealing temperatures have been investigated. While the grain size and dielectric constant of STO films increased with increasing annealing temperature, the leakage current characteristics of STO films slightly deteriorated. The leakage current density of a 40nm-STO film was about 5×10−8A/cm2 at 3V.

Ferroelectric properties and leakage current characteristics of radio-frequency-sputtered SrBi2(V0.1Nb0.9)2O9 thin films

2004 ◽  
Vol 96 (4) ◽  
pp. 2181-2185 ◽  
Author(s):  
S. Ezhilvalavan ◽  
Victor Samper ◽  
Toh Wei Seng ◽  
Xue Junmin ◽  
John Wang
Keyword(s):  
Thin Films ◽  
Radio Frequency ◽  
Leakage Current ◽  
Ferroelectric Properties ◽  
Current Characteristics

Accurate Modeling Methodology of Laterally Diffused Metal-Oxide Semiconductor Leakage Current for Electro-Static Discharge Protection Circuit Design

2021 ◽  
Vol 21 (8) ◽  
pp. 4230-4234
Author(s):  
Jun Hyeok Kim ◽  
Su Min Lee ◽  
Chan Ho Park
Keyword(s):  
Metal Oxide ◽  
Leakage Current ◽  
Measurement Data ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Modeling Methodology ◽  
Trap Assisted Tunneling ◽  
Protection Circuit ◽  
Current Characteristics ◽  
Static Discharge

A modeling method using juncap2 physical compact model with SRH (Shockley-Read-Hall), TAT (Trap-Assisted-Tunneling), BBT (Band-to-Band Tunneling) effects is presented for the leakage current in a laterally diffused metal-oxide semiconductor (LDMOS). The juncap2 model is successfully combined with BSIM4 model and it is validated with measurement data. The model accurately predicts the leakage current characteristics for the entire bias region and temperature.

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