Advanced 2D/3D simulations for laser annealed device using an atomistic kinetic Monte Carlo approach and Scanning Spreading Resistance Microscopy (SSRM)

Author(s):  
T. Noda ◽  
P. Eyben ◽  
W. Vandervorst ◽  
C. Vrancken ◽  
E. Rosseel ◽  
...  
2015 ◽  
Vol 163 (3) ◽  
pp. A329-A337 ◽  
Author(s):  
Guillaume Blanquer ◽  
Yinghui Yin ◽  
Matias A. Quiroga ◽  
Alejandro A. Franco

2003 ◽  
Vol 532-535 ◽  
pp. 531-535
Author(s):  
S. Baud ◽  
F. Picaud ◽  
C. Ramseyer

2013 ◽  
Vol 87 (6) ◽  
Author(s):  
T. J. Fal ◽  
J. I. Mercer ◽  
M. D. Leblanc ◽  
J. P. Whitehead ◽  
M. L. Plumer ◽  
...  

Author(s):  
Abdenour Saoudi ◽  
Linda Aissani ◽  
Grégoire Sorba ◽  
Francisco Chinesta

This work aims at analyzing the scaling behavior and develop correlations during surface growing for different germination lengths. The surface growing by random deposition is simulated using a kinetic Monte Carlo approach, by considering different germination lengths. Different surface descriptors are extracted, among them the roughness and the correlation. The former allows extracting the scaling behavior, while the latter proves the existence of correlations independent of the system size but dependent on the germination length. Moreover, as in the case of random deposition with a null germination length, the growing roughness never saturates.


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