Kinetics and Thermodynamics of Silicon Carbide Physical Vapor Transport Reactions: A Quantum Chemistry and Kinetic Monte Carlo Approach

2021 ◽  
pp. 111421
Author(s):  
Ahmed Abubakar Alao ◽  
Wen-Dung Hsu
2019 ◽  
Vol 12 (03) ◽  
pp. 1950032 ◽  
Author(s):  
Yuchen Deng ◽  
Yaming Zhang ◽  
Nanlong Zhang ◽  
Qiang Zhi ◽  
Bo Wang ◽  
...  

Pure dense silicon carbide (SiC) ceramics were obtained via the high-temperature physical vapor transport (HTPVT) method using graphite paper as the growth substrate. The phase composition, the evolution of microstructure, the thermal diffusivity and thermal conductivity at RT to 200∘C were investigated. The obtained samples had a relative density of higher than 98.7% and a large grain size of 1[Formula: see text]mm, the samples also had a room-temperature thermal conductivity of [Formula: see text] and with the temperature increased to 200∘C, the thermal conductivity still maintained at [Formula: see text].


2004 ◽  
Vol 457-460 ◽  
pp. 55-58 ◽  
Author(s):  
Peter J. Wellmann ◽  
Z.G. Herro ◽  
Sakwe Aloysius Sakwe ◽  
Pierre M. Masri ◽  
M.V. Bogdanov ◽  
...  

2015 ◽  
Vol 163 (3) ◽  
pp. A329-A337 ◽  
Author(s):  
Guillaume Blanquer ◽  
Yinghui Yin ◽  
Matias A. Quiroga ◽  
Alejandro A. Franco

2003 ◽  
Vol 532-535 ◽  
pp. 531-535
Author(s):  
S. Baud ◽  
F. Picaud ◽  
C. Ramseyer

2013 ◽  
Vol 740-742 ◽  
pp. 295-300 ◽  
Author(s):  
Massimo Camarda ◽  
Antonino La Magna ◽  
Francesco La Via

We use three dimensional kinetic Monte Carlo simulations on super-lattices to study the hetero-polytypical growth of cubic silicon carbide polytype (3C-SiC) on misoriented hexagonal (4H and 6H) substrates finding that the growth on misoriented (4°-10° degree off) 6H substrates, with step bunched surfaces, can strongly improve the quality of the cubic epitaxial film promoting 3C single domain growths


2013 ◽  
Vol 28 (11) ◽  
pp. 1248-1252 ◽  
Author(s):  
Yonggui Shi ◽  
Xinghua Yang ◽  
Dong Wang ◽  
Peng Zhang ◽  
Jincheng Zhang ◽  
...  

2007 ◽  
Vol 19 (23) ◽  
pp. 5531-5537 ◽  
Author(s):  
Siddarth G. Sundaresan ◽  
Albert V. Davydov ◽  
Mark D. Vaudin ◽  
Igor Levin ◽  
James E. Maslar ◽  
...  

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