2008 IEEE International Electron Devices Meeting
Latest Publications

TOTAL DOCUMENTS

260

(FIVE YEARS 0)

H-INDEX

32

(FIVE YEARS 0)

Published By IEEE

9781424423774

Latest Documents Most Cited Documents Contributed Authors Related Sources Related Keywords

High performance oxide thin film transistors with double active layers

2008 IEEE International Electron Devices Meeting ◽

10.1109/iedm.2008.4796617 ◽

2008 ◽

Author(s):

Sun Il Kim ◽

Chang Jung Kim ◽

Jae Chul Park ◽

Ihun Song ◽

Sang Wook Kim ◽

...

Keyword(s):

Thin Film ◽

Thin Film Transistors ◽

High Performance ◽

Oxide Thin Film ◽

Download Full-text

Advanced image sensor technology for pixel scaling down toward 1.0µm (Invited)

2008 IEEE International Electron Devices Meeting ◽

10.1109/iedm.2008.4796671 ◽

2008 ◽

Author(s):

JungChak Ahn ◽

Chang-Rok Moon ◽

Bumsuk Kim ◽

Kyungho Lee ◽

Yitae Kim ◽

...

Keyword(s):

Image Sensor ◽

Sensor Technology ◽

Download Full-text

Variability modeling and impact on design

2008 IEEE International Electron Devices Meeting ◽

10.1109/iedm.2008.4796791 ◽

2008 ◽

Author(s):

Hidetoshi Onodera

Keyword(s):

Variability Modeling

Download Full-text

Session 16: Process technology - Ge-Channel CMOS and advanced gate stacks

2008 IEEE International Electron Devices Meeting ◽

10.1109/iedm.2008.4796701 ◽

2008 ◽

Author(s):

Anand Murthy

Keyword(s):

Gate Stacks ◽

Process Technology

Download Full-text

Trap Spectroscopy by Charge Injection and Sensing (TSCIS): A quantitative electrical technique for studying defects in dielectric stacks

2008 IEEE International Electron Devices Meeting ◽

10.1109/iedm.2008.4796812 ◽

2008 ◽

Author(s):

R. Degraeve ◽

M. Cho ◽

B. Govoreanu ◽

B. Kaczer ◽

M.B. Zahid ◽

...

Keyword(s):

Charge Injection

Download Full-text

Good 150°C retention and fast erase characteristics in charge-trap-engineered memory having a scaled Si3N4 layer

2008 IEEE International Electron Devices Meeting ◽

10.1109/iedm.2008.4796829 ◽

2008 ◽

Author(s):

S. H. Lina ◽

Albert Chin ◽

F. S. Yeh ◽

S. P. McAlister

Keyword(s):

Download Full-text

On strain and scattering in deeply-scaled n-channel MOSFETs: A quantum-corrected semiclassical Monte Carlo analysis

2008 IEEE International Electron Devices Meeting ◽

10.1109/iedm.2008.4796846 ◽

2008 ◽

Author(s):

Ningyu Shi ◽

Leonard F. Register ◽

Sanjay K. Banerjee

Keyword(s):

Monte Carlo ◽

Monte Carlo Analysis

Download Full-text

Design and use of tweakable devices for future logic implementation

2008 IEEE International Electron Devices Meeting ◽

10.1109/iedm.2008.4796710 ◽

2008 ◽

Author(s):

Puneet Gupta

Download Full-text

Amorphous silicon thin-film transistors with DC saturation current half-life of more than 100 years

2008 IEEE International Electron Devices Meeting ◽

10.1109/iedm.2008.4796621 ◽

2008 ◽

Author(s):

Bahman Hekmatshoar ◽

Kunigunde H. Cherenack ◽

Sigurd Wagner ◽

James C. Sturm

Keyword(s):

Thin Film ◽

Amorphous Silicon ◽

Half Life ◽

Thin Film Transistors ◽

Saturation Current ◽

Silicon Thin Film

Download Full-text

Scaling of 32nm low power SRAM with high-K metal gate

2008 IEEE International Electron Devices Meeting ◽

10.1109/iedm.2008.4796660 ◽

2008 ◽

Author(s):

H. S. Yang ◽

R. Wong ◽

R. Hasumi ◽

Y. Gao ◽

N.S. Kim ◽

...

Keyword(s):

Low Power ◽

Download Full-text