2008 IEEE International Electron Devices Meeting
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TOTAL DOCUMENTS

260
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32
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Published By IEEE

9781424423774
Latest Documents Most Cited Documents Contributed Authors Related Sources Related Keywords

Sub-20 nm gate length FinFET design: Can high-κ spacers make a difference?

2008 ◽  
Author(s):  
Angada B. Sachid ◽  
Roswald Francis ◽  
Maryam Shojaei Baghini ◽  
Dinesh K. Sharma ◽  
Karl-Heinz Bach ◽  
...  
Keyword(s):  
Gate Length ◽  
20 Nm

Scaling trends for random telegraph noise in deca-nanometer Flash memories

2008 ◽  
Author(s):  
A. Ghetti ◽  
C. Monzio Compagnoni ◽  
F. Biancardi ◽  
A. L. Lacaita ◽  
S. Beltrami ◽  
...  
Keyword(s):  
Flash Memories ◽  
Random Telegraph Noise ◽  
Telegraph Noise

32nm gate-first high-k/metal-gate technology for high performance low power applications

2008 ◽  
Author(s):  
C. H. Diaz ◽  
K. Goto ◽  
H.T. Huang ◽  
Yuri Yasuda ◽  
C.P. Tsao ◽  
...  
Keyword(s):  
Low Power ◽  
High Performance ◽  
Metal Gate ◽  
High K

A 145MHz low phase-noise capacitive silicon micromechanical oscillator

2008 ◽  
Author(s):  
Hossein Miri Lavasani ◽  
Ashwin K. Samarao ◽  
Giorgio Casinovi ◽  
Farrokh Ayazi
Keyword(s):  
Phase Noise ◽  
Low Phase Noise

6F2 buried wordline DRAM cell for 40nm and beyond

2008 ◽  
Author(s):  
T. Schloesser ◽  
F. Jakubowski ◽  
J. v. Kluge ◽  
A. Graham ◽  
S. Slesazeck ◽  
...  

Record PVCR GaAs-based tunnel diodes fabricated on Si substrates using aspect ratio trapping

2008 ◽  
Author(s):  
S. L. Rommel ◽  
D. Pawlik ◽  
P. Thomas ◽  
M. Barth ◽  
K. Johnson ◽  
...  
Keyword(s):  
Aspect Ratio ◽  
Tunnel Diodes ◽  
Si Substrates

Novel model for cell - system interaction (MCSI) in NAND Flash

2008 ◽  
Author(s):  
C. Friederich ◽  
J. Hayek ◽  
A. Kux ◽  
T. Muller ◽  
N. Chan ◽  
...  
Keyword(s):  
Cell System ◽  
Nand Flash ◽  
Novel Model
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