Novel 140°C hybrid thin film solar cell/transistor technology with 9.6% conversion efficiency and 1.1 cm2/V-s electron mobility for low-temperature substrates

2010 ◽  
Author(s):  
Chang-Hong Shen ◽  
Jia-Min Shieh ◽  
Hao-Chung Kuo ◽  
Jung Y. Huang ◽  
Wen-Hsien Huang ◽  
...  
Keyword(s):  
Thin Film ◽  
Solar Cell ◽  
Low Temperature ◽  
Conversion Efficiency ◽  
Electron Mobility ◽  
Thin Film Solar Cell ◽  
Hybrid Thin Film

Cu(In,Ga)(S,Se)2 Thin Film Solar Cell with 10.7% Conversion Efficiency Obtained by Selenization of the Na-Doped Spray-Pyrolyzed Sulfide Precursor Film

2015 ◽  
Vol 7 (12) ◽  
pp. 6472-6479 ◽  
Author(s):  
Wilman Septina ◽  
Masaaki Kurihara ◽  
Shigeru Ikeda ◽  
Yasuhiro Nakajima ◽  
Toshiyuki Hirano ◽  
...  
Keyword(s):  
Thin Film ◽  
Solar Cell ◽  
Conversion Efficiency ◽  
Thin Film Solar Cell ◽  
Precursor Film

Thin film solar cell with 8.4% power conversion efficiency using an earth-abundant Cu2ZnSnS4absorber

2011 ◽  
Vol 21 (1) ◽  
pp. 72-76 ◽  
Author(s):  
Byungha Shin ◽  
Oki Gunawan ◽  
Yu Zhu ◽  
Nestor A. Bojarczuk ◽  
S. Jay Chey ◽  
...  
Keyword(s):  
Thin Film ◽  
Solar Cell ◽  
Power Conversion Efficiency ◽  
Conversion Efficiency ◽  
Thin Film Solar Cell ◽  
Power Conversion ◽  
Earth Abundant

Electrodeposited Cu2 ZnSnSe4 thin film solar cell with 7% power conversion efficiency

2013 ◽  
Vol 22 (1) ◽  
pp. 58-68 ◽  
Author(s):  
Lian Guo ◽  
Yu Zhu ◽  
Oki Gunawan ◽  
Tayfun Gokmen ◽  
Vaughn R. Deline ◽  
...  
Keyword(s):  
Thin Film ◽  
Solar Cell ◽  
Power Conversion Efficiency ◽  
Conversion Efficiency ◽  
Thin Film Solar Cell ◽  
Power Conversion

Numerical Simulation of Nc-Silicon PIN Solar Cells with AMPS-1D

2013 ◽  
Vol 712-715 ◽  
pp. 309-312 ◽  
Author(s):  
Ming Kun Xu
Keyword(s):  
Thin Film ◽  
Numerical Simulation ◽  
Solar Cells ◽  
Solar Cell ◽  
Conversion Efficiency ◽  
Thin Film Solar Cell ◽  
High Performance ◽  
Fill Factor ◽  
High Efficiency ◽  
Program Package

P+a-SiC/ I nc-Si/N+a-Si structure solar cells is simulated by AMPS-1D program package to characterize the new thin film solar cell. In order to analyze the characteristics of the device, the thickness of layer are considered. The results show that the thickness of layer and the value of layer have a great effect on the conversion efficiency. Our results suggest a high performance P a-SiC/ I nc-Si/N a-Si structure solar cells with high efficiency of 14.411% and fill factor of 0.738. The simulation result is potentially valuable in exploring gradual bandgap P+a-SiC/I nc-Si/N+a-Si structure solar cells with high performance.

Growth of Large Grain Polycrystalline Silicon Thin Film on Soda-lime Glass at Low Temperature for Solar Cell Applications

2011 ◽  
Vol 1321 ◽  
Author(s):  
K. Wang ◽  
K. H. Wong
Keyword(s):  
Thin Film ◽  
Solar Cell ◽  
Low Temperature ◽  
Thin Film Solar Cell ◽  
Seed Layer ◽  
Polycrystalline Silicon ◽  
Soda Lime ◽  
Absorber Layer ◽  
Soda Lime Glass ◽  
Si Thin Film

ABSTRACTHigh quality polycrystalline silicon (poly-Si) thin film solar cell was successfully fabricated on soda-lime glass substrates by electron beam (Ebeam) evaporation at low processing temperature. The initial poly-Si seed layer (p+-type 0.5 μm thick) was grown via the aluminum induced crystallization (AIC) method at 450 °C. Prominent interdiffusion and Si crystallization have been observed. X-ray diffraction (XRD) shows that (111) is the dominating crystalline orientation. Post annealing at 450 °C for six hours has produced densely packed Si grains with dimension of more than 10 μm in the plane of the film. Non-destructive Raman spectroscopy reveals the remarkable crystalline improvement for samples after thermal treatment. After removing the top diffused Al by chemical means, an absorber layer (p-type) of 0.9 μm thick was subsequently deposited onto the seed layer by Ebeam evaporation at 500 °C. Transmission electron microscopy (TEM) confirmed good homo-epitaxial growth. Without breaking the high vacuum, an n-type amorphous Si (a-Si) layer (0.7 μm thick) was coated onto the absorber layer to form p-n junction. The corresponding I-V characteristics suggest that our low temperature processing technique is applicable for production of poly-Si thin film solar cell on low cost substrates.

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