Fabrication of Transparent and Conductive SWCNT/SiO2 Composite Thin-Film by Photo-Irradiation of Molecular Precursor Films

A single-walled carbon nanotube (SWCNT)-silica composite thin film on a quartz glass was formed by ultraviolet irradiation (20–40 °C) onto a spin-coated precursor film. With 7.4 mass% SWCNTs, the electrical resistivity reached 7.7 × 10−3 Ω·cm after UV-irradiation. The transmittance was >80% at 178–2600 nm, and 79%–73% at 220–352 nm. Heat treatment increased the transparency and pencil hardness, without affecting the low electrical resistivity. Raman spectroscopy and microscopic analyses revealed the excellent film morphology with good SWCNT dispersal. The low refractive index (1.49) and haze value (<1.5%) are invaluable for transparent windows for novel optoelectronic devices.

Facile Fabrication of Single-Walled Carbon Nanotube/Anatase Composite Thin Film on Quartz Glass Substrate for Translucent Conductive Photoelectrode

A single-walled carbon nanotube/anatase (SWCNT/anatase) composite thin film with a transmittance of over 70% in the visible-light region was fabricated on a quartz glass substrate by heat treating a precursor film at 500 °C in air. The precursor film was formed by spin coating a mixed solution of the titania molecular precursor and well-dispersed SWCNTs (0.075 mass%) in ethanol. The anatase crystals and Ti3+ ions in the composite thin films were determined by X-ray diffraction and X-ray photoelectron spectroscopy, respectively. The effect of the heating process on the SWCNTs was analyzed using Raman spectroscopy. The composite film showed an even surface with a scratch resistance of 4H pencil hardness, as observed using field-emission scanning electron microscopy and atomic force microscopy. The electrical resistivity and optical bandgap energy of the composite thin film with a thickness of 100 nm were 6.6 × 10−2 Ω cm and 3.4 eV, respectively, when the SWCNT content in the composite thin film was 2.9 mass%. An anodic photocurrent density of 4.2 μA cm−2 was observed under ultraviolet light irradiation (16 mW cm−2 at 365 nm) onto the composite thin film, thus showing excellent properties as a photoelectrode without conductive substrates.

CdS/PbSe Heterojunction Made via Chemical Bath Deposition and Ionic Exchange Processes to Develop Low-Cost and Scalable Devices

Complete optoelectronic devices present major difficulties that are caused by aqueous chemical deposition. In this work, a ITO/CdS/PbSe heterostructure was developed, depositing CdS over an ITO-coated substrate via a chemical bath deposition (CBD) technique. The next step involved the growth of a plumbonacrite film over CdS via CBD, where the film acted as a precursor film to be converted to PbSe via ion exchange. The characterization of each material involved in the heterostructure were as follows: the CdS thin films presented a hexagonal crystalline structure and bandgap of 2.42 eV; PbSe had a cubic structure and a bandgap of 0.34 eV. I vs. V measurements allowed the observation of the electrical behavior, which showed a change from an ohmic to diode response by applying a thermal annealing at 150 °C for 5 min. The forward bias of the diode response was in the order of 0.8 V, and the current-voltage characteristics were analyzed by using the modified Shockley model, obtaining an ideality factor of 2.47, being similar to a Schottky diode. Therefore, the reported process to synthesize an ITO/CdS/PbSe heterostructure by aqueous chemical methods was successful and could be used to develop optoelectronic devices.

The influence of selenium amount added into the graphite box during the selenization of solution deposited CIGSe thin films.

Cu(In,Ga)Se2 (CIGSe) semiconductor is an efficient light absorber material for thin-film solar cell technology. The sequential evaporation of precursor solution, followed by the selenization process, is a promising non-vacuum and low-cost approach for CIGSe thin-film fabrication. The main properties of CIGSe thin films are strongly affected by the post-selenization step. Hence, thorough control of selenization parameters is essential for achieving pure crystalline, large grain films needed for high-performance solar cell devices. In this study, the impact of selenium (Se) amount added during the selenization step was evaluated. The structural, morphological, and compositional properties of the selenized thin films were investigated. The CIGSe precursor film was deposited by a spin-coating technique using a thiol/amine-based solution, followed by annealing with different Se amounts (100, 200, and 300 mg) within a partially closed small round graphite container. In all cases, uniform films of 1.2–1.5 µm thickness with a well-defined single chalcopyrite phase were obtained. It was observed that the grain size and Se content increased with increasing Se mass added. Moreover, the sample selenized with 200 mg Se resulted in higher surface coverage, thinner fine-grained layer, and less MoSe2 formation than the excess Se samples.

Dynamics of thin precursor film in wetting of nanopatterned surfaces

The spreading of a liquid droplet on flat surfaces is a well-understood phenomenon, but little is known about how liquids spread on a rough surface. When the surface roughness is of the nanoscopic length scale, the capillary forces dominate and the liquid droplet spreads by wetting the nanoscale textures that act as capillaries. Here, using a combination of advanced nanofabrication and liquid-phase transmission electron microscopy, we image the wetting of a surface patterned with a dense array of nanopillars of varying heights. Our real-time, high-speed observations reveal that water wets the surface in two stages: 1) an ultrathin precursor water film forms on the surface, and then 2) the capillary action by nanopillars pulls the water, increasing the overall thickness of water film. These direct nanoscale observations capture the previously elusive precursor film, which is a critical intermediate step in wetting of rough surfaces.

Deep-Ultraviolet Transparent Conductive MWCNT/SiO2 Composite Thin Film Fabricated by UV Irradiation at Ambient Temperature onto Spin-Coated Molecular Precursor Film

Deep-ultraviolet (DUV) light-transparent conductive composite thin films, consisting of dispersed multiwalled carbon nanotubes (MWCNTs) and SiO2 matrix composites, were fabricated on a quartz glass substrate. Transparent and well-adhered amorphous thin films, with a thickness of 220 nm, were obtained by weak ultraviolet (UV) irradiation (4 mW cm−2 at 254 nm) for more than 6 h at 20−40 °C onto the precursor films, which were obtained by spin coating with a mixed solution of MWCNT in water and Si(IV) complex in ethanol. The electrical resistivity of MWCNT/SiO2 composite thin film is 0.7 Ω·cm, and transmittance in the wavelength region from DUV to visible light is higher than 80%. The MWCNT/SiO2 composite thin film showed scratch resistance at pencil hardness of 8H. Importantly, the resistivity of the MWCNT/SiO2 composite thin film was maintained at the original level even after heat treatment at 500 °C for 1 h. It was observed that the heat treatment of the composite thin film improved durability against both aqueous solutions involving a strong acid (HCl) and a strong base (NaOH).

Recent Advances in the Plasma-Assisted Synthesis of Zinc Oxide Nanoparticles

An overview of recent work on the low-temperature plasma-assisted synthesis of zinc oxide (ZnO) nanoparticles is presented and interpreted in terms of gas-phase and surface reactions with illustrated examples. The thermodynamical nonequilibrium conditions allow the formation of chemically reactive species with a potential energy of several eV, which readily interact with the Zn precursors and initiate reactions leading to the formation of nanoparticles or nanowires. The high-quality nanowires were synthesized from Zn powders only upon interaction with moderately ionized plasma in a narrow range of plasma parameters. This technique is promising for the synthesis of large quantities of nanowires with aspect ratios well above 10, but the exact range of parameters remains to be determined. Apart from the ex situ techniques, the ZnO nanoparticles can be synthesized by depositing a film of precursors (often Zn salts or Zn-containing organometallic compounds) and exposing them to oxygen plasma. This technique is useful for the synthesis of well-adherent ZnO nanoparticles on heat-sensitive objects but requires further scientific validation as it often leads to the formation of a semicontinuous ZnO film rather than nanoparticles. Both low-pressure and atmospheric plasmas are useful in converting the precursor film into ZnO nanoparticles despite completely different mechanisms.