Heterogeneous Integration for High Frequency RF Applications

2020 ◽  
Author(s):  
A. Gutierrez-Aitken
Keyword(s):  
High Frequency ◽  
Heterogeneous Integration ◽  
Rf Applications

A 0.25um High Voltage LDMOSFET for RF Applications and High-frequency Parameter Extraction

2012 ◽  
Author(s):  
C. Y. Hung ◽  
K. H. Lo ◽  
C. M. Hu ◽  
C. H. Chu ◽  
D. C. Chang ◽  
...  
Keyword(s):  
High Voltage ◽  
High Frequency ◽  
Parameter Extraction ◽  
Frequency Parameter ◽  
Rf Applications

3D Heterogeneous Integration using MEMS Devices for RF Applications

2012 ◽  
Vol 1427 ◽  
Author(s):  
Fumihiko Nakazawa ◽  
Xiaoyu Mi ◽  
Takeaki Shimanouchi ◽  
Tadashi Nakatani ◽  
Takashi Katsuki ◽  
...  
Keyword(s):  
Rf Mems ◽  
Acoustic Resonator ◽  
Tunable Filter ◽  
Wafer Surface ◽  
Heterogeneous Integration ◽  
Mems Devices ◽  
Mems Switches ◽  
Mems Switch ◽  
Film Bulk ◽  
Rf Applications

ABSTRACTThis paper presents novel 3D heterogeneous integrations using MEMS Devices for RF applications. We propose a 3D heterogeneous integration method that combines the advantages of LTCC, passive integration, and MEMS technologies. The basic concept is to form a large-size LTCC wiring wafer and then to form high-Q passives or MEMS filters directly on the wafer surface. Other functional devices such as ICs, SAWs, and MEMS switches are mounted above the surface-formed devices. A miniaturized duplexer consisted of IPD, SAW, and film bulk acoustic resonator (FBAR); and a next generation duplexer module consisted of an MEMS tunable filter and a piezoelectric transducer (PZT)-actuated RF MEMS switch were constructed to demonstrate its feasibility and effectiveness.

scholarly journals Characterization of high performance CNT-based TSV for high-frequency RF applications

2012 ◽  
Vol 1 (1) ◽  
pp. 37-49 ◽  
Author(s):  
Sukeshwar Kannan ◽  
Bruce Kim ◽  
Anurag Gupta ◽  
Seok-Ho Noh ◽  
Li Li
Keyword(s):  
High Frequency ◽  
High Performance ◽  
Rf Applications

Characterization of Graphene Gate Electrodes for Metal-Oxide-Semiconductor Devices

MRS Advances ◽  
2017 ◽  
Vol 2 (02) ◽  
pp. 103-108 ◽  
Author(s):  
Yanbin An ◽  
Aniruddh Shekhawat ◽  
Ashkan Behnam ◽  
Eric Pop ◽  
Ant Ural
Keyword(s):  
Metal Oxide ◽  
High Frequency ◽  
Tunneling Current ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Heterogeneous Integration ◽  
Gate Electrodes ◽  
Mos Devices ◽  
Capacitance Voltage

ABSTRACT We fabricate and characterize metal-oxide-semiconductor (MOS) devices with graphene as the gate electrode, 5 or 10 nm thick silicon dioxide as the insulator, and silicon as the semiconductor substrate. We find that Fowler-Nordheim tunneling dominates the gate current for the 10 nm oxide device. We also study the temperature dependence of the tunneling current in these devices in the range 77 to 300 K and extract the effective tunneling barrier height as a function of temperature for the 10 nm oxide device. Furthermore, by performing high frequency capacitance-voltage measurements, we observe a local capacitance minimum under accumulation, particularly for the 5 nm oxide device. By fitting the data using numerical simulations based on the modified density of states of graphene in the presence of charged impurities, we show that this local minimum results from the quantum capacitance of graphene. These results provide important insights for the heterogeneous integration of graphene into conventional silicon technology.

High-Frequency Noise Modeling of MOSFETs for Ultra Low-Voltage RF Applications

2015 ◽  
Vol 63 (1) ◽  
pp. 141-154 ◽  
Author(s):  
Lye Hock Kelvin Chan ◽  
Kiat Seng Yeo ◽  
Kok Wai Johnny Chew ◽  
Shih Ni Ong
Keyword(s):  
High Frequency ◽  
Low Voltage ◽  
Frequency Noise ◽  
High Frequency Noise ◽  
Noise Modeling ◽  
Rf Applications

scholarly journals Buckled diamond-like carbon nanomechanical resonators

Nanoscale ◽  
2015 ◽  
Vol 7 (35) ◽  
pp. 14747-14751 ◽  
Author(s):  
Matti Tomi ◽  
Andreas Isacsson ◽  
Mika Oksanen ◽  
Dmitry Lyashenko ◽  
Jukka-Pekka Kaikkonen ◽  
...  
Keyword(s):  
High Frequency ◽  
Frequency Tuning ◽  
Promising Material ◽  
Diamond Like Carbon ◽  
Nanomechanical Resonators ◽  
Rf Applications

Conducting diamond-like carbon is a promising material for high-frequency nanoelectromechanical resonators. Using buckled films increases the frequency tuning of the resonator, which can be of advantage in rf applications.

Sign in / Sign up

Export Citation Format

Share Document