Influence of Etching Trench on Keff2 of Film Bulk Acoustic Resonator

As radio-frequency (RF) communication becomes more ubiquitous globally, film bulk acoustic resonators (FBAR) have attracted great attention for their superior performance. One of the key parameters of an FBAR, the effective electromechanical coupling coefficient (Keff2), has a great influence on the bandwidth of RF filters. In this work, we propose a feasible method to tune the Keff2 of the FBAR by etching the piezoelectric material to form a trench around the active area of the FBAR. The influence of the position of the etching trench on the Keff2 of the FBAR was investigated by 3D finite element modeling and experimental fabricating. Meanwhile, a theoretical electrical model was presented to test and verify the simulated and measured results. The Keff2 of the FBAR tended to be reduced when the distance between the edge of the top electrode and the edge of the trench was increased, but the Q value of the FBAR was not degraded. This work provides a new possibility for tuning the Keff2 of resonators to meet the requirements of different filter bandwidths.

Peculiarities of the Acoustic Wave Propagation in Diamond-Based Multilayer Piezoelectric Structures as “Me1/(Al,Sc)N/Me2/(100) Diamond/Me3” and “Me1/AlN/Me2/(100) Diamond/Me3” under Metal Thin-Film Deposition

New theoretical and experimental results of microwave acoustic wave propagation in diamond-based multilayer piezoelectric structures (MPS) as “Me1/(Al,Sc)N/Me2/(100) diamond/Me3” and “Me1/AlN/Me2/(100) diamond/Me3” under three metal film depositions, including the change in the quality factor Q as a result of Me3 impact, were obtained. Further development of our earlier studies was motivated by the necessity of creating a sensor model based on the above fifth layered MPS and its in-depth study using the finite element method (FEM). Experimental results on the change in operational checkpoint frequencies and quality factors under the effect of film deposition are in satisfactory accordance with FEM data. The relatively small decrease in the quality factor of diamond-based high overtone bulk acoustic resonator (HBAR) under the metal layer effect observed in a wide microwave band could be qualified as an important result. Changes in operational resonant frequencies vs. film thickness were found to have sufficient distinctions. This fact can be quite explained in terms of the difference between acoustic impedances of diamond and deposited metal films.

Thin-Film Lithium Niobate Based Acousto-Optic Modulation Working at Higher-Order TE1 Mode

Acousto-optic modulation (AOM) is regarded as an effective way to link multi-physical fields on-chip. We propose an on-chip AOM scheme based on the thin-film lithium niobate (TFLN) platform working at the higher-order TE1 mode, rather than the commonly used fundamental TE0 mode. Multi-physical field coupling analyses were carried out to obtain the refractive index change of the optical waveguide (>6.5×10−10 for a single phonon) induced by the enhanced acousto-optic interaction between the acoustic resonator mode and the multimode optical waveguide. By using a Mach-Zehnder interferometer (MZI) structure, the refractive index change is utilized to modulate the output spectrum of the MZI, thus achieving the AOM function. In the proposed AOM scheme, efficient mode conversion between the TE0 and TE1 mode is required in order to ensure that the AOM works at the higher-order TE1 mode in the MZI structure. Our results show that the half-wave-voltage-length product (VπL) is <0.01 V·cm, which is lower than that in some previous reports on AOM and electro-optic modulation (EOM) working at the fundamental TE0 mode (e.g., VπL > 0.04 V·cm for AOM, VπL > 1 V·cm for EOM). Finally, the proposed AOM has lower loss when compared with EOM because the electrode of the AOM can be placed far from the optical waveguide.

Biaxial FBAR Magnetic Sensor Based on Fe80Ga20 Anisotropic ΔE Effect

With the increasing application of personal navigation system in consumer electronics, the demand for multi-axis magnetic sensors based on MEMS is growing. We report a biaxial MEMS DC magnetic sensor consisting of an Mo/AlN/Fe80Ga20 film bulk acoustic resonator (FBAR), with anisotropy ΔE effect-based sensing principle. Different from the previously reported one-dimensional magnetic sensor based on the ΔE effect, the anisotropic ΔE effect was used to realize in-plane and out-of-plane two-dimensional magnetic field responses on a discrete sensor, and the sensor had two readout methods: resonant frequency f and return loss S11. The magnetic sensor realized the resonant frequency f shifted by 1.03 MHz and 0.2 MHz in the 567 Oe in-plane magnetic field and 720 Oe out-of-plane magnetic field, respectively, and the S11 changes by -30.2 dB and -0.92 dB. As the applied magnetic field increases, the -3 dB bandwidth quality factor Q3dB of the S11 curve gradually increases, and its maximum values in the in-plane and out-of-plane magnetic fields are 77143 and 1828, respectively, which reduces the detection limit of the magnetic sensor. The resonant magnetic sensor has stable high linear temperature and frequency drift characteristics, and its temperature frequency coefficient is -48.7 ppm/℃.

Theoretical Study on Compliance and Stability of Active Gas-Static Journal Bearing with Output Flow Rate Restriction and Damping Chambers

The design is considered and theoretical research of operability of the active radial gas-static bearing with restrictors of output flow rate in the form of mobile rings with an elastic supports and the dampers working by Helmholtz acoustic resonator principle is done. The mathematical model of the bearing dynamics and method of calculating its degree of stability are developed. The device is steady against vibrations; it has smaller power consumption compared to the known devices with input regulators, a zero and negative compliance of a gas-lubricated film.

Mechanically driven SMR-based NEMS magnetoelectric antennas

Mechanically driven magnetoelectric (ME) antennas have been demonstrated to be one of the most effective methods to miniaturise antennas compared to state-of-the-art compact antennas. However, the nanoelectromechanical systems (NEMS) ME antennas are fragile due to their suspended thin-film heterostructure, and have very low power handling capabilities. Here we show that solidly mounted resonator (SMR)-based NEMS ME antennas on a Bragg acoustic resonator, which have a circular resonating disk of 200 μm diameters and operate at 1.75 GHz, show a high antenna gain of -18.8 dBi and 1dB compression point (P1dB) of 30.4 dBm. Compared to same-size thin-film bulk acoustic resonator (FBAR) ME antennas with a free-standing membrane, the SMR-based antennas are much more structurally stable with 23.3 dB higher power handling capability and easier fabrication steps. These SMR-based ME antennas are fabricated with processes compatible with complementary metal-oxide-semiconductor (CMOS), exhibiting dramatic size miniaturisation, high power handling, high mechanical robustness, simple fabrication processes, and much higher antenna radiation gain compared to same-size state-of-the-art antennas.

Fabrication of AlGaN High Frequency Bulk Acoustic Resonator by Reactive RF Magnetron Co-sputtering System

In this study, aluminum gallium nitride (AlGaN) thin films are used as the piezoelectric layers to fabricate solidly mounted resonators (SMR) for high frequency acoustic wave devices. AlGaN film is deposited on a Bragg reflector, composed of three pairs of Mo and SiO2 films, through a reactive radio frequency (RF) magnetron co-sputtering system at room temperature. The optimized deposition parameters of AlGaN film have a sputtering power of 175 W for Al target, sputtering power of 25 W for GaN target, N2 flow ratio (N2/Ar + N2) of 60%, and sputtering pressure of 10 mTorr. The obtained AlGaN film has a smooth surface, uniform crystal grains, and strong c-axis orientation. The contents of Al and Ga in the AlGaN film, analyzed by energy dispersive X-ray spectroscopy (EDS) are 81% and 19%, respectively. Finally, the frequency response S11 of the obtained SMR device shows that the center frequency is 3.60 GHz, the return loss is about −8.62 dB, the electromechanical coupling coefficient (kt2) is 2.33%, the quality factor (Q) value is 96.93 and the figure of merit (FoM) value is 2.26.