Design of a millimeter-wave dual-band bandpass filter using SIW dual-mode cavities

2016 ◽  
Author(s):  
Kaida Dong ◽  
Jingyan Mo ◽  
Yuhong He ◽  
Zhewang Ma ◽  
Xuexia Yang
Keyword(s):  
Millimeter Wave ◽  
Bandpass Filter ◽  
Dual Band ◽  
Dual Mode

A Compact Millimeter-Wave Dual-Band Bandpass Filter Using Substrate-Integrated Waveguide (SIW) Dual-Mode Cavities

2016 ◽  
Vol E99.C (7) ◽  
pp. 761-765 ◽  
Author(s):  
Kaida DONG ◽  
Jingyan MO ◽  
Yuhong HE ◽  
Zhewang MA ◽  
Xuexia YANG
Keyword(s):  
Millimeter Wave ◽  
Bandpass Filter ◽  
Dual Band ◽  
Substrate Integrated Waveguide ◽  
Dual Mode

Millimeter-Wave Dual-Band Bandpass Filter With Large Bandwidth Ratio Using GaAs-Based Integrated Passive Device Technology

2021 ◽  
Vol 42 (4) ◽  
pp. 493-496
Author(s):  
Guangxu Shen ◽  
Wenjie Feng ◽  
Wenquan Che ◽  
Yongrong Shi ◽  
Yiming Shen
Keyword(s):  
Millimeter Wave ◽  
Bandpass Filter ◽  
Dual Band ◽  
Passive Device ◽  
Large Bandwidth ◽  
Device Technology

Millimeter-wave dual-mode and dual-band switchable Gilbert up-conversion mixer in 65-nm CMOS process

2021 ◽  
pp. 1-5
Author(s):  
Fang Zhu ◽  
Guo Qing Luo
Keyword(s):  
Millimeter Wave ◽  
Complementary Metal Oxide Semiconductor ◽  
Local Oscillator ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Dual Band ◽  
Cmos Process ◽  
Pumping Power ◽  
Dual Mode ◽  
Dc Power

Abstract In this paper, a millimeter-wave (MMW) dual-mode and dual-band switchable Gilbert up-conversion mixer in a commercial 65-nm complementary metal oxide semiconductor (CMOS) process is presented. By simply changing the bias, the proposed CMOS Gilbert up-conversion mixer can be switched between subharmonic and fundamental operation modes for MMW dual-band applications. With a low local oscillator pumping power of 3 dBm and low dc power consumption of 6 mW, the proposed CMOS Gilbert up-conversion mixer exhibits a measured conversion gain of −0.5 ± 1.5 dB from 37 to 50 GHz and 2.5 ± 1.5 dB from 17.5 to 32 GHz for the subharmonic and fundamental modes, respectively.

Miniaturized Dual-Band Bandpass Filter Using Embedded Dual-Mode Resonator with Controllable Bandwidths

Frequenz ◽  
2016 ◽  
Vol 70 (9-10) ◽  
Author(s):  
Chuanming Zhu ◽  
Jin Xu ◽  
Wei Kang ◽  
Zhenxin Hu ◽  
Wen Wu
Keyword(s):  
Insertion Loss ◽  
Degrees Of Freedom ◽  
Bandpass Filter ◽  
The Other ◽  
Dual Band ◽  
Dual Mode ◽  
Transmission Zeros ◽  
Low Insertion Loss ◽  
Multiple Transmission ◽  
Mode Resonator

AbstractIn this paper, a miniaturized dual-band bandpass filter (DB-BPF) using embedded dual-mode resonator (DMR) with controllable bandwidths is proposed. Two passbands are generated by two sets of resonators operating at two different frequencies. One set of resonators is utilized not only as the resonant elements that yield the lower passband, but also as the feeding structures with source-load coupling to excite the other to produce the upper passband. Sufficient degrees of freedom are achieved to control the center frequencies and bandwidths of two passbands. Moreover, multiple transmission zeros (TZs) are created to improve the passband selectivity of the filter. The design of the filter has been demonstrated by the measurement. The filter features not only miniaturized circuit sizes, low insertion loss, independently controllable central frequencies, but also controllable bandwidths and TZs.

Dual-mode resonator filter with improved feed-lines for dual-band applications

2020 ◽  
Vol 71 (6) ◽  
pp. 433-435
Author(s):  
Shan Shan Gao ◽  
Jia-Lin Li ◽  
Zhe Lin Zhu ◽  
Jia Li Xu ◽  
Yong Xin Zhao
Keyword(s):  
Simple Structure ◽  
High Selectivity ◽  
Bandpass Filter ◽  
Dual Band ◽  
Dual Mode ◽  
Transmission Zeros ◽  
Good Consistency ◽  
Mode Resonator

AbstractAn improved feedline configuration for dual-mode resonator filter is investigated in this paper. Based on the introduced topology, a dual-mode dual-band bandpass filter with center frequencies of 1.8 and 2.4 GHz is optimally designed, fabricated and tested. The introduced dual-band bandpass filter has simple structure and enables high selectivity to be realized due to two pairs of transmission zeros located near to the lower and upper passband, respectively. Both measured and simulated performances are presented with good consistency.

Sign in / Sign up

Export Citation Format

Share Document