IEEE Standard Definitions and Characterization of Floating Gate Semiconductor Arrays

Mapping Intimacies ◽

10.1109/ieeestd.1998.89425 ◽

1998 ◽

Keyword(s):

Floating Gate ◽

Ieee Standard ◽

Semiconductor Arrays

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IEEE Standard Definitions and Characterization of Floating Gate Semiconductor Arrays

10.1109/ieeestd.1991.101070 ◽

1991 ◽

Keyword(s):

Floating Gate ◽

Ieee Standard ◽

Semiconductor Arrays

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IEEE Standard Definitions and Characterization of Metal Nitride Oxide Semiconductor Arrays

10.1109/ieeestd.1988.79517 ◽

2008 ◽

Keyword(s):

Oxide Semiconductor ◽

Metal Nitride ◽

Ieee Standard ◽

Semiconductor Arrays ◽

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Wafer-level characterization of EEPROM tunnel oxide using a fast floating-gate technique and a realistic memory cell-based test structure

Proceedings of the 2002 International Conference on Microelectronic Test Structures, 2002. ICMTS 2002. ◽

10.1109/icmts.2002.1193187 ◽

2003 ◽

Author(s):

S. Renard ◽

P. Boivin ◽

J.L. Autran

Keyword(s):

Memory Cell ◽

Test Structure ◽

Floating Gate ◽

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Fabrication and characterization of hybrid nanodots for floating gate application

2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology ◽

10.1109/icsict.2010.5667554 ◽

2010 ◽

Author(s):

Seiichi Miyazaki

Keyword(s):

Floating Gate ◽

Fabrication And Characterization

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Characterization of Nano-Floating Gate Memory with ZnO Nanoparticles Embedded in Polymeric Matrix

Japanese Journal of Applied Physics ◽

10.1143/jjap.45.7209 ◽

2006 ◽

Vol 45 (9A) ◽

pp. 7209-7212 ◽

Author(s):

Eun Kyu Kim ◽

Jae-Hoon Kim ◽

Dong Uk Lee ◽

Gun Hong Kim ◽

Young-Ho Kim

Keyword(s):

Zno Nanoparticles ◽

Polymeric Matrix ◽

Floating Gate ◽

Floating Gate Memory

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Memory Characterization of MOS Memory Device with High Density Self-Assembled Tungsten Nanodots Floating Gate and HfO2 Blocking Dielectric

10.7567/ssdm.2008.j-2-5 ◽

2008 ◽

Author(s):

Y. Pei ◽

M. Nishijima ◽

T. Fukushima ◽

T. Tanaka ◽

M. Koyanagi

Keyword(s):

Memory Device ◽

High Density ◽

Floating Gate ◽

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Experimental characterization of circuits for controlled programming of floating-gate MOSFET's

IEEE Journal of Solid-State Circuits ◽

10.1109/4.387077 ◽

1995 ◽

Vol 30 (6) ◽

pp. 706-709 ◽

Author(s):

M. Lanzoni ◽

B. Ricco

Keyword(s):

Floating Gate ◽

Experimental Characterization

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Characterization of oxide trap and interface trap creation during hot-carrier stressing of n-MOS transistors using the floating-gate technique

IEEE Electron Device Letters ◽

10.1109/55.215109 ◽

1993 ◽

Vol 14 (2) ◽

pp. 63-65 ◽

Author(s):

B.S. Doyle ◽

J. Faricelli ◽

K.R. Mistry ◽

D. Vuillaume

Keyword(s):

Floating Gate ◽

Interface Trap ◽

Mos Transistors ◽

Hot Carrier ◽

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Characterization of room temperature detectors using the proposed IEEE standard

2001 IEEE Nuclear Science Symposium Conference Record (Cat. No.01CH37310) ◽

10.1109/nssmic.2001.1008466 ◽

2005 ◽

Author(s):

R.M. Keyser

Keyword(s):

Room Temperature ◽

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Characterization of Electronic Charged States of Si-Based Quantum Dots and Their Application to Floating Gate Memories

ECS Meeting Abstracts ◽

10.1149/ma2006-01/9/390 ◽

2006 ◽

Keyword(s):

Quantum Dots ◽

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