Impact of the storage layer charging on Random Telegraph Noise behavior of sub-50nm charge-trap-based TANOS and floating-gate memory cells
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2002 ◽
Vol 49
(2)
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pp. 301-307
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2001 ◽
Vol 48
(6)
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pp. 2222-2228
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2006 ◽
Vol 53
(6)
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pp. 3291-3297
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2001 ◽
Vol 48
(9)
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pp. 2081-2089
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2009 ◽
Vol 56
(8)
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pp. 1624-1630
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