A new compact DC model of floating gate memory cells without capacitive coupling coefficients

2002 ◽  
Vol 49 (2) ◽  
pp. 301-307 ◽  
Author(s):  
L. Larcher ◽  
P. Pavan ◽  
S. Pietri ◽  
L. Albani ◽  
A. Marmiroli
Keyword(s):  
Floating Gate ◽  
Capacitive Coupling ◽  
Memory Cells ◽  
Coupling Coefficients ◽  
Floating Gate Memory

The Combined Effects of Cycling Endurance and TID on Floating Gate Memory Cells

2021 ◽  
Author(s):  
Side Song ◽  
Guozhu Liu ◽  
Qi He ◽  
Xiang Gu ◽  
Genshen Hong ◽  
...  
Keyword(s):  
Radiation Effects ◽  
Memory Cell ◽  
Floating Gate ◽  
Combined Effects ◽  
Memory Cells ◽  
Threshold Voltage Shift ◽  
Floating Gate Memory ◽  
Interface Generation ◽  
Radiation Hardened ◽  
Radiation Induced

Abstract In this paper, the combined effects of cycling endurance and radiation on floating gate memory cell are investigated in detail, the results indicate that: 1.The programmed flash cells with a prior appropriate number of program and erase cycling stress exhibit much smaller threshold voltage shift than their counterpart in response to radiation, which is mainly ascribed to the recombination of trapped electrons (introduced by cycling stress) and trapped holes (introduced by irradiation) in the oxide surrounding the floating gate; 2.The radiation induced transconductance degradation in prior cycled flash cell is more severe than those without cycling stress in both of the programmed state and erased state; 3. Radiation is more likely to induce interface generation in programmed state than in erased state. This paper will be useful in understanding the issues involved in cycling endurance and radiation effects as well as in designing radiation hardened floating gate memory cells.

Radiation effects on floating-gate memory cells

2001 ◽  
Vol 48 (6) ◽  
pp. 2222-2228 ◽  
Author(s):  
G. Cellere ◽  
P. Pellati ◽  
A. Chimenton ◽  
J. Wyss ◽  
A. Modelli ◽  
...  
Keyword(s):  
Radiation Effects ◽  
Floating Gate ◽  
Memory Cells ◽  
Floating Gate Memory

Secondary Effects of Single Ions on Floating Gate Memory Cells

2006 ◽  
Vol 53 (6) ◽  
pp. 3291-3297 ◽  
Author(s):  
G. Cellere ◽  
A. Paccagnella ◽  
A. Visconti ◽  
M. Bonanomi
Keyword(s):  
Floating Gate ◽  
Memory Cells ◽  
Secondary Effects ◽  
Floating Gate Memory

A model for TID effects on floating Gate Memory cells

2004 ◽  
Vol 51 (6) ◽  
pp. 3753-3758 ◽  
Author(s):  
G. Cellere ◽  
A. Paccagnella ◽  
A. Visconti ◽  
M. Bonanomi ◽  
P. Caprara ◽  
...  
Keyword(s):  
Floating Gate ◽  
Memory Cells ◽  
Floating Gate Memory
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