Oxygen gas assisted electron beam lithography in organosilane self-assembled monolayers

Author(s):  
M. Yamaguchi ◽  
N. Saito ◽  
O. Takai
Small ◽  
2005 ◽  
Vol 1 (8-9) ◽  
pp. 833-837 ◽  
Author(s):  
Guo-Jun Zhang ◽  
Takashi Tanii ◽  
Tamotsu Zako ◽  
Takumi Hosaka ◽  
Takeo Miyake ◽  
...  

1996 ◽  
Vol 100 (39) ◽  
pp. 15900-15909 ◽  
Author(s):  
Kannan Seshadri ◽  
Karl Froyd ◽  
Atul N. Parikh ◽  
David L. Allara ◽  
Michael J. Lercel ◽  
...  

1995 ◽  
Vol 27 (1-4) ◽  
pp. 43-46 ◽  
Author(s):  
M.J. Lercel ◽  
G.F. Redinbo ◽  
M. Rooks ◽  
R.C. Tiberio ◽  
H.G. Craighead ◽  
...  

2000 ◽  
Vol 636 ◽  
Author(s):  
C. K. Harnett ◽  
A. G. Lopez ◽  
K. M. Satyalakshmi ◽  
Y.-F. Chen ◽  
H. G. Craighead

AbstractWe have used a variety of self-assembled monolayers as resists for low energy electron beam patterning. These compounds can be used as high-resolution patternable linker molecules for selected area binding of proteins and other organic compounds, as well as nanoparticles with organic chemical coatings. Because these systems can be aligned in registry to existing patterns, the organic systems may be positioned with the accuracy of electron-beam lithography. We have also explored the use of self-assembled monolayers for the creation of sub-wavelength artificial dielectric systems. The ultra-thin patterned monolayer is combined with a contrast-enhancing etch process to create high aspect ratio structures. This technique can be used to fabricate diffractive optical devices in a single-step process.


2012 ◽  
Vol 3 ◽  
pp. 101-113 ◽  
Author(s):  
Zhe She ◽  
Andrea DiFalco ◽  
Georg Hähner ◽  
Manfred Buck

Self-assembled monolayers (SAMs) of 4'-methylbiphenyl-4-thiol (MBP0) adsorbed on polycrystalline gold substrates served as templates to control electrochemical deposition of Cu structures from acidic solution, and enabled the subsequent lift-off of the metal structures by attachment to epoxy glue. By exploiting the negative-resist behaviour of MBP0, the SAM was patterned by means of electron-beam lithography. For high deposition contrast a two-step procedure was employed involving a nucleation phase around −0.7 V versus Cu2+/Cu and a growth phase at around −0.35 V versus Cu2+/Cu. Structures with features down to 100 nm were deposited and transferred with high fidelity. By using substrates with different surface morphologies, AFM measurements revealed that the roughness of the substrate is a crucial factor but not the only one determining the roughness of the copper surface that is exposed after lift-off.


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