Abstract
Quantum emitters are needed for a myriad of applications ranging from quantum sensing to quantum computing. Hexagonal boron nitride (hBN) quantum emitters are the most promising solid-state platform to date due to its high brightness, stability, and the possibility of spin photon interface. However, the understanding of the physical origins of the single-photon emitters (SPEs) is still limited. Here, we present concrete and conclusive evidence that the dense SPEs in hBN, across entire visible spectrum, can be well explained by donor-acceptor pairs (DAPs). Based on the DAP transition generation mechanism, we have calculated their wavelength fingerprint, matching well with the experimentally observed photoluminescence spectrum. Our work serves as a step forward for the physical understanding of SPEs in hBN and their applications in quantum technologies.
Bottom‐Up Synthesis of Hexagonal Boron Nitride Nanoparticles with Intensity‐Stabilized Quantum Emitters
