Generation of High-Density Quantum Emitters in High-Quality, Exfoliated Hexagonal Boron Nitride

2021 ◽  
Vol 13 (39) ◽  
pp. 47283-47292
Author(s):  
Yongliang Chen ◽  
Chi Li ◽  
Simon White ◽  
Milad Nonahal ◽  
Zai-Quan Xu ◽  
...  
Keyword(s):  
Boron Nitride ◽  
Hexagonal Boron Nitride ◽  
High Density ◽  
High Quality ◽  
Quantum Emitters

scholarly journals Fabrication and Deterministic Transfer of High-Quality Quantum Emitters in Hexagonal Boron Nitride

ACS Photonics ◽  
2018 ◽  
Vol 5 (6) ◽  
pp. 2305-2312 ◽  
Author(s):  
Tobias Vogl ◽  
Geoff Campbell ◽  
Ben C. Buchler ◽  
Yuerui Lu ◽  
Ping Koy Lam
Keyword(s):  
Boron Nitride ◽  
Hexagonal Boron Nitride ◽  
High Quality ◽  
Quantum Emitters

scholarly journals Bottom‐Up Synthesis of Hexagonal Boron Nitride Nanoparticles with Intensity‐Stabilized Quantum Emitters

Small ◽  
2021 ◽  
pp. 2008062
Author(s):  
Yongliang Chen ◽  
Xiaoxue Xu ◽  
Chi Li ◽  
Avi Bendavid ◽  
Mika T. Westerhausen ◽  
...  
Keyword(s):  
Boron Nitride ◽  
Hexagonal Boron Nitride ◽  
Bottom Up ◽  
Boron Nitride Nanoparticles ◽  
Quantum Emitters

scholarly journals 2D-3D integration of hexagonal boron nitride and a high-κ dielectric for ultrafast graphene-based electro-absorption modulators

2021 ◽  
Vol 12 (1) ◽  
Author(s):  
Hitesh Agarwal ◽  
Bernat Terrés ◽  
Lorenzo Orsini ◽  
Alberto Montanaro ◽  
Vito Sorianello ◽  
...  
Keyword(s):  
Boron Nitride ◽  
Hafnium Oxide ◽  
High Speed ◽  
Hexagonal Boron Nitride ◽  
Temperature Stability ◽  
Cost Effective ◽  
Fold Increase ◽  
Building Blocks ◽  
High Quality ◽  
New Device

AbstractElectro-absorption (EA) waveguide-coupled modulators are essential building blocks for on-chip optical communications. Compared to state-of-the-art silicon (Si) devices, graphene-based EA modulators promise smaller footprints, larger temperature stability, cost-effective integration and high speeds. However, combining high speed and large modulation efficiencies in a single graphene-based device has remained elusive so far. In this work, we overcome this fundamental trade-off by demonstrating the 2D-3D dielectric integration in a high-quality encapsulated graphene device. We integrated hafnium oxide (HfO2) and two-dimensional hexagonal boron nitride (hBN) within the insulating section of a double-layer (DL) graphene EA modulator. This combination of materials allows for a high-quality modulator device with high performances: a ~39 GHz bandwidth (BW) with a three-fold increase in modulation efficiency compared to previously reported high-speed modulators. This 2D-3D dielectric integration paves the way to a plethora of electronic and opto-electronic devices with enhanced performance and stability, while expanding the freedom for new device designs.

scholarly journals Facile Synthesis of High-Quality Nano-Size 10B-Enriched Fibers of Hexagonal Boron Nitride

Crystals ◽  
2021 ◽  
Vol 11 (3) ◽  
pp. 222
Author(s):  
Pervaiz Ahmad ◽  
Mayeen Uddin Khandaker ◽  
Fida Rehman ◽  
Nawshad Muhammad ◽  
Mohammad Rashed Iqbal Faruque ◽  
...  
Keyword(s):  
Boron Nitride ◽  
High Intensity ◽  
Hexagonal Boron Nitride ◽  
Internal Space ◽  
Facile Synthesis ◽  
High Quality ◽  
Crystalline Nature ◽  
Nano Size ◽  
Advanced Applications

The interesting properties of hexagonal boron nitride (h-BN) and its potential uses in thermo-structural advanced applications have been limited or restricted by its inherent brittleness, which can easily be eliminated by its fibers (h-BN) in nanoscale dimensions. The current study is based on the synthesis of nanoscale 10B-enriched fibers of h-BN (10BNNFs) from 10B in the precursors instead of B in two-hour annealing at 900 °C and one-hour growth at 1000 °C. All of the 10BNNFs are randomly curved and highly condensed or filled from 10h-BN species with no internal space or crack. XRD peaks reported the 10h-BN phase and highly crystalline nature of the synthesized 10BNNFs. 10h-BN phase and crystalline nature of 10BNNFs are confirmed from high-intensity peaks at 1392 (cm−1) in Raman and FTIR spectroscopes.

scholarly journals Temperature-dependent Spectral Emission of Hexagonal Boron Nitride Quantum Emitters on Conductive and Dielectric Substrates

2021 ◽  
Vol 15 (1) ◽  
Author(s):  
Hamidreza Akbari ◽  
Wei-Hsiang Lin ◽  
Benjamin Vest ◽  
Pankaj K. Jha ◽  
Harry A. Atwater
Keyword(s):  
Boron Nitride ◽  
Hexagonal Boron Nitride ◽  
Spectral Emission ◽  
Temperature Dependent ◽  
Dielectric Substrates ◽  
Quantum Emitters

Synthesis of centimeter-scale high-quality polycrystalline hexagonal boron nitride films from the Fe flux

Nanoscale ◽  
2021 ◽  
Author(s):  
Yifei Li ◽  
Xin Wen ◽  
Changjie Tan ◽  
Ning Li ◽  
Ruijie Li ◽  
...  
Keyword(s):  
Boron Nitride ◽  
Hexagonal Boron Nitride ◽  
Two Dimensional ◽  
High Quality ◽  
Boron Nitride Films

Owing to its irreplaceable roles in new functional devices, such as universal substrates and excellent layered insulators, high-quality hexagonal BN (hBN) crystals are exceedingly required in the field of two-dimensional...

scholarly journals Strain induced coupling and quantum information processing with hexagonal boron nitride quantum emitters

2021 ◽  
Author(s):  
Fatemeh Tarighitabesh ◽  
Qaem Hassanzada ◽  
Mohammad Hadian ◽  
Arsalan Hashemi ◽  
Abdolhosseini Sarsari ◽  
...  
Keyword(s):  
Information Processing ◽  
Quantum Information ◽  
Boron Nitride ◽  
Quantum Information Processing ◽  
Hexagonal Boron Nitride ◽  
Quantum Emitters

scholarly journals Blue-light-emitting color centers in high-quality hexagonal boron nitride

2019 ◽  
Vol 100 (15) ◽  
Author(s):  
Brian Shevitski ◽  
S. Matt Gilbert ◽  
Christopher T. Chen ◽  
Christoph Kastl ◽  
Edward S. Barnard ◽  
...  
Keyword(s):  
Boron Nitride ◽  
Blue Light ◽  
Hexagonal Boron Nitride ◽  
Color Centers ◽  
High Quality ◽  
Light Emitting
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