Background:
The time and frequency responses of Multiple Quantum Barrier (MQB)
nano-scale Avalanche Photodiodes (APDs) based on Si~3C-SiC material system have been investigated
in this final part.
Methods:
A very narrow rectangular pulse of pulse-width of 0.4 ps has been used as the input optical
pulse having 850 nm wavelength incidents on the p+-side of the MQB APD structures and corresponding
current responses have been calculated by using a simulation method developed by the
authors.
Results:
Finally the frequency responses of the devices are obtained via the Fourier transform of
the corresponding pulse current responses in time domain.
Conclusion:
Simulation results show that MQB nano-APDs possess significantly faster time response
and wider frequency response as compared to the flat Si nano-APDs under similar operating
conditions.
Probing higher order correlations of the photon field with photon number resolving avalanche photodiodes
