Theoretical Investigation of effects of Size Variations and External Magnetic Field on Binding Energy and Center Frequency in InGaAs/GaAs Quantum Dot Slow Light Devices

Author(s):  
Bahram Choupanzadeh ◽  
Hassan Kaatuzian
2008 ◽  
Vol 78 (7) ◽  
Author(s):  
E. S. Moskalenko ◽  
L. A. Larsson ◽  
M. Larsson ◽  
P. O. Holtz ◽  
W. V. Schoenfeld ◽  
...  

2008 ◽  
Vol 22 (12) ◽  
pp. 1923-1932
Author(s):  
JIA LIU ◽  
ZI-YU CHEN

The influence of a perpendicular magnetic field on a bound polaron near the interface of a polar–polar semiconductor with Rashba effect has been investigated. The material is based on a GaAs / Al x Ga 1-x As heterojunction and the Al concentration varying from 0.2 ≤ x ≤ 0.4 is the critical value below which the Al x Ga 1-x As is a direct band gap semiconductor.The external magnetic field strongly altered the ground state binding energy of the polaron and the Rashba spin–orbit (SO) interaction originating from the inversion asymmetry in the heterostructure splitting of the ground state binding energy of the bound polaron. How the ground state binding energy will be with the change of the external magnetic field, the location of a single impurity and the electron area density have been shown in this paper, taking into account the SO coupling. The contribution of the phonons are also considered. It is found that the spin-splitting states of the bound polaron are more stable, and, in the condition of weak magnetic field, the Zeeman effect can be neglected.


Sign in / Sign up

Export Citation Format

Share Document