Ultra-wide-band low noise amplifier using inductive feedback in 90-nm CMOS technology

Author(s):  
Heng-Ming Hsu ◽  
Tai-Hsin Lee ◽  
Jhao-Siang Huang
2018 ◽  
Vol 7 (2.24) ◽  
pp. 448
Author(s):  
S Manjula ◽  
M Malleshwari ◽  
M Suganthy

This paper presents a low power Low Noise Amplifier (LNA) using 0.18µm CMOS technology for ultra wide band (UWB) applications. gm boosting common gate (CG) LNA is designed to improve the noise performance.  For the reduction of on chip area, active inductor is employed at the input side of the designed LNA for input impedance matching. The proposed UWB LNA is designed using Advanced Design System (ADS) at UWB frequency of 3.1-10.6 GHz. Simulation results show that the gain of 10.74+ 0.01 dB, noise figure is 4.855 dB, input return loss <-13 dB and 12.5 mW power consumption.  


Author(s):  
C. Grewing ◽  
M. Friedrich ◽  
G. Li Puma ◽  
C. Sandner ◽  
S. van Waasen ◽  
...  

2013 ◽  
Vol 36 (2) ◽  
pp. 87-91 ◽  
Author(s):  
H. Alavi-Rad ◽  
S. Ziabakhsh ◽  
S. Ziabakhsh ◽  
M. C. E. Yagoub

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