A low power, good gain flatness SiGe low noise amplifier for 3.1–10.6GHz ultra wide band radio

2007 ◽  
Author(s):  
Shih-Chih Chen ◽  
Ruey-Lue Wang ◽  
Cheng-Lung Tsai ◽  
Jui-Hao Shang ◽  
Chien-Hsuan Liu
Keyword(s):  
Low Power ◽  
Wide Band ◽  
Low Noise ◽  
Low Noise Amplifier ◽  
Ultra Wide Band ◽  
Noise Amplifier

scholarly journals Design of Low Power UWB CMOS Low Noise Amplifier using Active Inductor for WLAN Receiver

2018 ◽  
Vol 7 (2.24) ◽  
pp. 448
Author(s):  
S Manjula ◽  
M Malleshwari ◽  
M Suganthy
Keyword(s):  
Low Power ◽  
Noise Figure ◽  
Wide Band ◽  
Cmos Technology ◽  
Low Noise ◽  
Low Noise Amplifier ◽  
Design System ◽  
Active Inductor ◽  
Chip Area ◽  
Noise Amplifier

This paper presents a low power Low Noise Amplifier (LNA) using 0.18µm CMOS technology for ultra wide band (UWB) applications. gm boosting common gate (CG) LNA is designed to improve the noise performance.  For the reduction of on chip area, active inductor is employed at the input side of the designed LNA for input impedance matching. The proposed UWB LNA is designed using Advanced Design System (ADS) at UWB frequency of 3.1-10.6 GHz. Simulation results show that the gain of 10.74+ 0.01 dB, noise figure is 4.855 dB, input return loss <-13 dB and 12.5 mW power consumption.  

Fully integrated ultra wide band CMOS low noise amplifier

2004 ◽  
Author(s):  
C. Grewing ◽  
M. Friedrich ◽  
G. Li Puma ◽  
C. Sandner ◽  
S. van Waasen ◽  
...  
Keyword(s):  
Wide Band ◽  
Low Noise ◽  
Low Noise Amplifier ◽  
Ultra Wide Band ◽  
Fully Integrated ◽  
Noise Amplifier
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