A Mott Insulator-Based Oscillator Circuit for Reservoir Computing

Author(s):  
Wen Ma ◽  
Tyler Hennen ◽  
Martin Lueker-Boden ◽  
Rick Galbraith ◽  
Jonas Goode ◽  
...  
2004 ◽  
Vol 114 ◽  
pp. 377-378 ◽  
Author(s):  
Y. Shimizu ◽  
K. Miyagawa ◽  
K. Oda ◽  
K. Kanoda ◽  
M. Maesato ◽  
...  

Author(s):  
Jeffery P. Huynh ◽  
Joseph P. Shannon ◽  
Richard W. Johnson ◽  
Mike Santana ◽  
Thomas Y. Chu ◽  
...  

Abstract Modifications directly to a transistor’s source/drain and polysilicon gate through the backside of a SOI device were made. Contact resistance data was obtained by creating contacts through the buried oxide layer of a manufactured test structure. A ring oscillator circuit was modified and the shift in oscillator frequency was measured. Finally, cross section images of the FIB created contacts were presented in the paper to illustrate the entire process.


2021 ◽  
Vol 104 (4) ◽  
Author(s):  
S. Hameed ◽  
J. Joe ◽  
D. M. Gautreau ◽  
J. W. Freeland ◽  
T. Birol ◽  
...  

2020 ◽  
Vol 20 (4) ◽  
pp. 8-27
Author(s):  
Mehdi Azadmehr ◽  
Igor Paprotny ◽  
Luca Marchetti
Keyword(s):  

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