Backside FIB Device Modifications Through the BOX Layer of an SOI Device

2002 ◽  
Author(s):  
Jeffery P. Huynh ◽  
Joseph P. Shannon ◽  
Richard W. Johnson ◽  
Mike Santana ◽  
Thomas Y. Chu ◽  
...  
Keyword(s):  
Contact Resistance ◽  
Oxide Layer ◽  
Cross Section ◽  
Test Structure ◽  
Ring Oscillator ◽  
Oscillator Circuit ◽  
Entire Process ◽  
Oscillator Frequency ◽  
Polysilicon Gate ◽  
Resistance Data

Abstract Modifications directly to a transistor’s source/drain and polysilicon gate through the backside of a SOI device were made. Contact resistance data was obtained by creating contacts through the buried oxide layer of a manufactured test structure. A ring oscillator circuit was modified and the shift in oscillator frequency was measured. Finally, cross section images of the FIB created contacts were presented in the paper to illustrate the entire process.

Analysis of crystallite size changes in a hematite and magnetite formed on steel used in the power idustry

2017 ◽  
Vol 1 (21) ◽  
pp. 65-73
Author(s):  
Monika Gwoździk
Keyword(s):  
Elevated Temperature ◽  
Oxide Layer ◽  
Cross Section ◽  
X Ray ◽  
Term Operation ◽  
Diffraction Line Profile ◽  
Crystallite Sizes ◽  
Scherrer Formula ◽  
Pipe Outlet

The paper presents results of studies on the crystallite sizes of oxide layer formed during a long-term operation on 10CrMo9-10 steel at an elevated temperature (T = 545° C, t = 200,000 h). This value was determined by a method based on analysis of the diffraction line profile, according to a Scherrer formula. The oxide layer was studied on a surface and a cross-section at the outer and inner site on the pipe outlet, at the fire and counter-fire wall of the tube. X-ray studies were carried out on the surface of a tube, then the layer’s surface was polished and the diffraction measurements repeated to reveal differences in the originated oxides layer.

Pin-Fin Heat Sink With Horizontal Base and Blocked Edges

2008 ◽  
Author(s):  
D. Sahray ◽  
H. Shmueli ◽  
N. Segal ◽  
G. Ziskind ◽  
R. Letan
Keyword(s):  
Heat Transfer ◽  
Free Convection ◽  
Contact Resistance ◽  
Cross Section ◽  
Heat Input ◽  
Heat Sink ◽  
Numerical Study ◽  
Heat Sinks ◽  
Transfer Enhancement ◽  
Pin Fin

In the present work, horizontal-base pin fin heat sinks exposed to free convection in air are studied. They are made of aluminum, and there is no contact resistance between the base and the fins. For the same base dimensions the fin height and pitch vary. The fins have a constant square cross-section. The edges of the sink are blocked: the surrounding insulation is flush with the fin tips. The effect of fin height and pitch on the performance of the sink is studied experimentally and numerically. In the experiments, the heat sinks are heated using foil electrical heaters. The heat input is set, and temperatures of the base and fins are measured. In the corresponding numerical study, the sinks and their environment are modeled using the Fluent 6 software. The results show that heat transfer enhancement due to the fins is not monotonic. The differences between sparsely and densely populated sinks are analyzed for various fin heights. Also assessed are effects of the blocked edges as compared to the previously studied cases where the sink edges were exposed to the surroundings.

The Relationship Between Microstructure and Contact Resistance in NiAuGe/ZrB2/Au Ohmic Contacts to GaAs.

1990 ◽  
Vol 181 ◽  
Author(s):  
M. P. Grimshaw ◽  
A. E. Staton-Bevan ◽  
J. Herniman ◽  
D. A. Allan
Keyword(s):  
Contact Resistance ◽  
Ohmic Contacts ◽  
Gaas Layer ◽  
Contact System ◽  
Initial Contact ◽  
The Relationship ◽  
Resistance Data

ABSTRACTThe microstructure and contact resistance of NiAuGe contacts to n-type GaAs were determined as a function of initial contact composition. The contact microstructures were found to contain varying amounts of of α, α’ and β (or Au7Ga2) Au-Ga, epitaxial Ge, NiGe and NiGeAs phases. A previously unidentified NiAsx (Zr,B) phase was also observed. The contact resistance was found to vary between 0.22-0.38±0.03Ωmm. Comparison of the microstructural and contact resistance data revealed that the ohmic formation models based on (i) the formation of a recrystallised n+ GaAs layer and (ii) the presence of a graded Ge/GaAs heterojunction were not applicable to this contact system.

scholarly journals An Acetone Microsensor with a Ring Oscillator Circuit Fabricated Using the Commercial 0.18 μm CMOS Process

Sensors ◽  
2014 ◽  
Vol 14 (7) ◽  
pp. 12735-12747 ◽  
Author(s):  
Ming-Zhi Yang ◽  
Ching-Liang Dai ◽  
Po-Jen Shih
Keyword(s):  
Ring Oscillator ◽  
Cmos Process ◽  
Oscillator Circuit

scholarly journals Polypyrrole Porous Micro Humidity Sensor Integrated with a Ring Oscillator Circuit on Chip

Sensors ◽  
2010 ◽  
Vol 10 (11) ◽  
pp. 10095-10104 ◽  
Author(s):  
Ming-Zhi Yang ◽  
Ching-Liang Dai ◽  
De-Hao Lu
Keyword(s):  
Humidity Sensor ◽  
Ring Oscillator ◽  
Oscillator Circuit ◽  
On Chip

P-10: Mechanism of Lowering Contact Resistance between Transparent Conducting Oxide Layer and Mo/Al/Mo Layer in TFT-LCDs

2005 ◽  
Vol 36 (1) ◽  
pp. 261
Author(s):  
Chang-Oh Jeong ◽  
Yang-Ho Bae ◽  
Beom-Seok Cho ◽  
Je-Hun Lee ◽  
Min-Seok Oh ◽  
...  
Keyword(s):  
Contact Resistance ◽  
Oxide Layer ◽  
Transparent Conducting Oxide ◽  
Transparent Conducting

On the source of scatter in contact resistance data

1992 ◽  
Vol 21 (9) ◽  
pp. 917-921 ◽  
Author(s):  
S. S. Winterton ◽  
T. J. Smy ◽  
N. G. Tarr
Keyword(s):  
Contact Resistance ◽  
Resistance Data

scholarly journals Capacitive Micro Pressure Sensor Integrated with a Ring Oscillator Circuit on Chip

Sensors ◽  
2009 ◽  
Vol 9 (12) ◽  
pp. 10158-10170 ◽  
Author(s):  
Ching-Liang Dai ◽  
Po-Wei Lu ◽  
Chienliu Chang ◽  
Cheng-Yang Liu
Keyword(s):  
Pressure Sensor ◽  
Ring Oscillator ◽  
Oscillator Circuit ◽  
On Chip
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