Purpose
Reference voltage or current generators are an important requirement for an analog or digital circuit design. Bandgap reference circuits (BGR) are most common way of generating the reference voltage. This paper aims to provide a detailed insight of design of a folded cascode operational amplifier (FC op amp) and a BGR circuit. The complete study flow from design to layout of the circuits on 180 nm semiconductor laboratory (SCL) process leading to bonding diagram for possible tape-out is discussed. This study work has been supported by MeitY, Govt. of India, through Special Manpower Development Project Chip to System Design.
Design/methodology/approach
This paper provides a detailed insight in design of a FC op amp and a BGR circuit. The complete study flow from design to layout of the two circuits on 180 nm SCL process leading to bonding diagram for possible tape-out is discussed. Section 2 shows the design of FC op amp, beta-multiplier circuit and their simulation results. Section 3 describes the comparison of design of conventional BGR and the proposed BGR with other state-of-art BGR circuits. Section 4 gives the comparison of their performance. The conclusion is given in Section 5.
Findings
The post-layout simulation of FC op amp show an open-loop gain of 64.5 dB, 3-dB frequency of 5.5 KHz, unity-gain bandwidth of 8.7 MHz, slew rate of 8.4 V/µs, CMRR of 111 dB and power of 25.5µW. Among the two BGR designs, the conventional BGR generated 693 mV of reference voltage with a temperature coefficient of 16 ppm/°C the other BGR, with curvature correction generated 1.3 V of reference voltage with a temperate coefficient of 6.3 ppm/°C , both results in temperature ranging from −40°C to 125°C. The chip layout of the circuits designed on 180 nm SCL process ensures design rule check (DRC), Antenna and layout versus schematic (LVS) clean with metal fill.
Research limitations/implications
Slew rate, stability analysis, power are important parameters which should be taken care while designing an op amp for a BGR. Direct current gain should be kept higher to reduce offset errors. Input common mode range is decided by the operating temperature range. A higher power supply rejection ratio will reduce BGR sensitivity to supply voltage variations. Input offset should be kept low to reduce BGR error in reference voltage. However, this paper emphasis on the flow from schematic to layout using simulation tools. As part of the study, the bonding diagram for tape-out of BGR and FC design in the given SCL frame size with seal ring is also explored, for possible tape-out.
Practical implications
Reference voltage or current generators are an important requirement for an analog or digital circuit design. BGR are most common way of generating the reference voltage. This paper provides a detailed insight in design of a FC op amp and a BGR circuit. The complete study flow from design to layout of the circuits on 180 nm SCL process leading to bonding diagram for possible tape-out is discussed. The chip layout of the circuits was designed on 180 nm SCL process ensuring DRC, antenna and LVS clean with metal fill using Cadence virtuoso and Mentor Graphics Calibre simulation tools.
Social implications
BGR are most common way of generating the reference voltage. This paper gives a detailed insight of a BGR design using a folded-cascode operational amplifier. The FC op amp is biased using a beta multiplier circuit and high-swing cascode current mirror circuit. The paper discuss FC circuit design flow from schematic to layout.
Originality/value
FC op amp is biased using a beta multiplier circuit and high-swing cascode current mirror. The paper discusses FC design flow from schematic to layout. The circuits were designed on 180 nm SCL technology with 1.8 V of power supply. The post-layout simulation show an open-loop gain of 64.5 dB, 3 dB frequency of 5.5 KHz, unity-gain bandwidth of 8.7 MHz, slew rate of 8.4 V/µs, CMRR of 111 dB and power of 25.5 µW. BGR were designed using FC op amp. The proposed BGR generated 1.3 V of reference voltage with a temperature coefficient of 6.3 ppm/°C in the range from −40°C to 125°C in schematic simulation.
