24.7 A 15dBm 12.8%-PAE Compact D-Band Power Amplifier with Two-Way Power Combining in 16nm FinFET CMOS

Author(s):  
Bart Philippe ◽  
Patrick Reynaert
2003 ◽  
Vol 51 (1) ◽  
pp. 144-147 ◽  
Author(s):  
Xin Jiang ◽  
Li Liu ◽  
S.C. Ortiz ◽  
R. Bashirullah ◽  
A. Mortazawi

Author(s):  
Clarence Rebello ◽  
Ted Kolasa ◽  
Parag Modi

Abstract During the search for the root cause of a board level failure, all aspects of the product must be revisited and investigated. These aspects encompass design, materials, and workmanship. In this discussion, the failure investigation involved an S-Band Power Amplifier assembly exhibiting abnormally low RF output power where initial troubleshooting did not provide a clear cause of failure. A detailed fault tree drove investigations that narrowed the focus to a few possible root causes. However, as the investigation progressed, multiple contributors were eventually discovered, some that were not initially considered.


Author(s):  
Ahmed S. H. Ahmed ◽  
Utku Soylu ◽  
Munkyo Seo ◽  
Miguel Urteaga ◽  
Mark J. W. Rodwell

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