Oscillation neuron based on threshold switching characteristics of niobium oxide films

2019 ◽  
Author(s):  
Qingxi Duan ◽  
Zhaokun Jing ◽  
Ke Yang ◽  
Ru Huang ◽  
Yuchao Yang
Keyword(s):  
Niobium Oxide ◽  
Oxide Films ◽  
Threshold Switching ◽  
Switching Characteristics

scholarly journals Threshold switching and electrical self-oscillation in niobium oxide films

2016 ◽  
Vol 120 (12) ◽  
pp. 124102 ◽  
Author(s):  
Xinjun Liu ◽  
Shuai Li ◽  
Sanjoy Kumar Nandi ◽  
Dinesh Kumar Venkatachalam ◽  
Robert Glen Elliman
Keyword(s):  
Niobium Oxide ◽  
Oxide Films ◽  
Threshold Switching

Photoconduction, Trapping, and Chemisorption Effects in Sputtered Niobium Oxide Films

1970 ◽  
Vol 41 (9) ◽  
pp. 3872-3876 ◽  
Author(s):  
Frank G. Ullman ◽  
Carl L. Deertz ◽  
Lucas W. Smith
Keyword(s):  
Niobium Oxide ◽  
Oxide Films

Enhanced switching characteristics of an ovonic threshold switching device with an ultra-thin MgO interfacial layer

2021 ◽  
pp. 1-1
Author(s):  
Jangseop Lee ◽  
Sangmin Lee ◽  
Myonghoon Kwak ◽  
Wooseok Choi ◽  
Oleksandr Mosendz ◽  
...  
Keyword(s):  
Interfacial Layer ◽  
Switching Device ◽  
Threshold Switching ◽  
Switching Characteristics

In Situ Hydrogen Plasma Exposure for Varying the Stoichiometry of Atomic Layer Deposited Niobium Oxide Films for Use in Neuromorphic Computing Applications

2020 ◽  
Vol 12 (14) ◽  
pp. 16639-16647 ◽  
Author(s):  
Alexander C. Kozen ◽  
Zachary R. Robinson ◽  
Evan R. Glaser ◽  
Mark Twigg ◽  
Thomas J. Larrabee ◽  
...  
Keyword(s):  
Niobium Oxide ◽  
Hydrogen Plasma ◽  
Oxide Films ◽  
Atomic Layer ◽  
Plasma Exposure ◽  
Neuromorphic Computing

scholarly journals Reversible nonvolatile and threshold switching characteristics in Cu/high-k/Si devices

2019 ◽  
Vol 16 (16) ◽  
pp. 20190404-20190404
Author(s):  
Chandreswar Mahata ◽  
Wonwoo Kim ◽  
Shiwhan Kim ◽  
Muhammad Ismail ◽  
Min-Hwi Kim ◽  
...  
Keyword(s):  
Threshold Switching ◽  
High K ◽  
Switching Characteristics
Sign in / Sign up

Export Citation Format

Share Document