scholarly journals Reversible nonvolatile and threshold switching characteristics in Cu/high-k/Si devices

2019 ◽  
Vol 16 (16) ◽  
pp. 20190404-20190404
Author(s):  
Chandreswar Mahata ◽  
Wonwoo Kim ◽  
Shiwhan Kim ◽  
Muhammad Ismail ◽  
Min-Hwi Kim ◽  
...  
Keyword(s):  
Threshold Switching ◽  
High K ◽  
Switching Characteristics

Improved Switching Characteristics Obtained by Using High-k Dielectric Layers in 4H-SiC IGBT: Physics-Based Simulation

2017 ◽  
Vol 897 ◽  
pp. 571-574 ◽  
Author(s):  
Vidya Naidu ◽  
Sivaprasad Kotamraju
Keyword(s):  
Switching Frequency ◽  
Power Losses ◽  
Switching Power ◽  
Mos Devices ◽  
High K ◽  
High Switching Frequency ◽  
Switching Characteristics ◽  
High K Dielectric ◽  
Current Duration ◽  
Physics Based Simulation

Silicon Carbide (SiC) based MOS devices are one of the promising devices for high temperature, high switching frequency and high power applications. In this paper, the static and dynamic characteristics of an asymmetric trench gate SiC IGBT with high-k dielectrics- HfO2 and ZrO2 are investigated. SiC IGBT with HfO2 and ZrO2 exhibited higher forward transconductance ratio and lower threshold voltage compared to conventionally used SiO2. In addition, lower switching power losses have been observed in the case of high-k dielectrics due to reduced tail current duration.

Enhanced switching characteristics of an ovonic threshold switching device with an ultra-thin MgO interfacial layer

2021 ◽  
pp. 1-1
Author(s):  
Jangseop Lee ◽  
Sangmin Lee ◽  
Myonghoon Kwak ◽  
Wooseok Choi ◽  
Oleksandr Mosendz ◽  
...  
Keyword(s):  
Interfacial Layer ◽  
Switching Device ◽  
Threshold Switching ◽  
Switching Characteristics

Improved threshold switching characteristics of multi-layer NbOx for 3-D selector application

2015 ◽  
Vol 147 ◽  
pp. 318-320 ◽  
Author(s):  
Jaehyuk Park ◽  
Euijun Cha ◽  
Daeseok Lee ◽  
Sangheon Lee ◽  
Jeonghwan Song ◽  
...  
Keyword(s):  
Threshold Switching ◽  
Switching Characteristics

Effect of Zr Addition on Threshold Switching Characteristics of Amorphous Ga 2 Te 3 Thin Films

2020 ◽  
Vol 217 (24) ◽  
pp. 2000623
Author(s):  
Dayoon Lee ◽  
Taeho Kim ◽  
Jaeyeon Kim ◽  
Hyunchul Sohn
Keyword(s):  
Thin Films ◽  
Threshold Switching ◽  
Zr Addition ◽  
Switching Characteristics

scholarly journals Threshold Switching of Ag-Ga2Te3 Selector with High Endurance for Applications to Cross-Point Arrays

2021 ◽  
Vol 16 (1) ◽  
Author(s):  
Jaeyeon Kim ◽  
Jimin Lee ◽  
Minkyu Kang ◽  
Hyunchul Sohn
Keyword(s):  
Three Dimensional ◽  
Input Voltage ◽  
Switching Behavior ◽  
Practical Application ◽  
Promising Candidate ◽  
Cross Point ◽  
Pulse Input ◽  
Threshold Switching ◽  
Array Structures ◽  
Switching Characteristics

AbstractThreshold switching in chalcogenides has attracted considerable attention because of their potential application to high-density and three-dimensional stackable cross-point array structures. However, despite their excellent threshold switching characteristics, the selectivity and endurance characteristics of such selectors should be improved for practical application. In this study, the effect of Ag on the threshold switching behavior of a Ga2Te3 selector was investigated in terms of selectivity and endurance. The Ag-Ga2Te3 selector exhibited a high selectivity of 108 with low off-state current of < 100 fA, steep turn-on slope of 0.19 mV/dec, and high endurance of 109 cycles. The transient response was verified to depend on the pulse input voltage and measurement temperature. Considering its excellent threshold switching characteristics, the Ag-Ga2Te3 selector is a promising candidate for applications in cross-point array structures.

Sign in / Sign up

Export Citation Format

Share Document